Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics

Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A low-temperature formation technique of Sn-doped Ge on insulator has been investigated by aluminum-induced crystallization using a-GeSn/Al stacked structures. For a-GeSn films (Sn concentration: 2%), the layer-exchange growth temperature is significantly decreased compared with a-Ge, which enables low temperature growth at 250°C. At such a low temperature, bulk nucleation of GeSn in Al layers is significantly suppressed, and (100)-oriented interface nucleation becomes dominant. On the other hand, growth rate becomes high by Sn-doping effects. As a result, formation of (100)-oriented large-grain (>10 μm) Sn-doped Ge (Sn concentration: 2%) crystals on insulating substrates becomes possible at a low temperature (250°C). This technique will be useful to realize advanced flexible electronics.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages191-193
Number of pages3
ISBN (Electronic)9784990875312
DOIs
Publication statusPublished - Aug 15 2016
Event23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan
Duration: Jul 6 2016Jul 8 2016

Other

Other23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
CountryJapan
CityKyoto
Period7/6/167/8/16

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Sasaki, M., Miyao, M., & Sadoh, T. (2016). Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 191-193). [7543662] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2016.7543662