Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics

Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A low-temperature formation technique of Sn-doped Ge on insulator has been investigated by aluminum-induced crystallization using a-GeSn/Al stacked structures. For a-GeSn films (Sn concentration: 2%), the layer-exchange growth temperature is significantly decreased compared with a-Ge, which enables low temperature growth at 250°C. At such a low temperature, bulk nucleation of GeSn in Al layers is significantly suppressed, and (100)-oriented interface nucleation becomes dominant. On the other hand, growth rate becomes high by Sn-doping effects. As a result, formation of (100)-oriented large-grain (>10 μm) Sn-doped Ge (Sn concentration: 2%) crystals on insulating substrates becomes possible at a low temperature (250°C). This technique will be useful to realize advanced flexible electronics.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages191-193
Number of pages3
ISBN (Electronic)9784990875312
DOIs
Publication statusPublished - Aug 15 2016
Event23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan
Duration: Jul 6 2016Jul 8 2016

Other

Other23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
CountryJapan
CityKyoto
Period7/6/167/8/16

Fingerprint

Flexible electronics
Crystallization
Aluminum
Growth temperature
Nucleation
Temperature
Doping (additives)
Crystals
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Sasaki, M., Miyao, M., & Sadoh, T. (2016). Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 191-193). [7543662] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2016.7543662

Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics. / Sasaki, Masaya; Miyao, Masanobu; Sadoh, Taizoh.

Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. p. 191-193 7543662.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sasaki, M, Miyao, M & Sadoh, T 2016, Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics. in Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7543662, Institute of Electrical and Electronics Engineers Inc., pp. 191-193, 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016, Kyoto, Japan, 7/6/16. https://doi.org/10.1109/AM-FPD.2016.7543662
Sasaki M, Miyao M, Sadoh T. Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2016. p. 191-193. 7543662 https://doi.org/10.1109/AM-FPD.2016.7543662
Sasaki, Masaya ; Miyao, Masanobu ; Sadoh, Taizoh. / Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics. Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 191-193
@inproceedings{be8bc6318caf49378a26dc8c48cca009,
title = "Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics",
abstract = "A low-temperature formation technique of Sn-doped Ge on insulator has been investigated by aluminum-induced crystallization using a-GeSn/Al stacked structures. For a-GeSn films (Sn concentration: 2{\%}), the layer-exchange growth temperature is significantly decreased compared with a-Ge, which enables low temperature growth at 250°C. At such a low temperature, bulk nucleation of GeSn in Al layers is significantly suppressed, and (100)-oriented interface nucleation becomes dominant. On the other hand, growth rate becomes high by Sn-doping effects. As a result, formation of (100)-oriented large-grain (>10 μm) Sn-doped Ge (Sn concentration: 2{\%}) crystals on insulating substrates becomes possible at a low temperature (250°C). This technique will be useful to realize advanced flexible electronics.",
author = "Masaya Sasaki and Masanobu Miyao and Taizoh Sadoh",
year = "2016",
month = "8",
day = "15",
doi = "10.1109/AM-FPD.2016.7543662",
language = "English",
pages = "191--193",
booktitle = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics

AU - Sasaki, Masaya

AU - Miyao, Masanobu

AU - Sadoh, Taizoh

PY - 2016/8/15

Y1 - 2016/8/15

N2 - A low-temperature formation technique of Sn-doped Ge on insulator has been investigated by aluminum-induced crystallization using a-GeSn/Al stacked structures. For a-GeSn films (Sn concentration: 2%), the layer-exchange growth temperature is significantly decreased compared with a-Ge, which enables low temperature growth at 250°C. At such a low temperature, bulk nucleation of GeSn in Al layers is significantly suppressed, and (100)-oriented interface nucleation becomes dominant. On the other hand, growth rate becomes high by Sn-doping effects. As a result, formation of (100)-oriented large-grain (>10 μm) Sn-doped Ge (Sn concentration: 2%) crystals on insulating substrates becomes possible at a low temperature (250°C). This technique will be useful to realize advanced flexible electronics.

AB - A low-temperature formation technique of Sn-doped Ge on insulator has been investigated by aluminum-induced crystallization using a-GeSn/Al stacked structures. For a-GeSn films (Sn concentration: 2%), the layer-exchange growth temperature is significantly decreased compared with a-Ge, which enables low temperature growth at 250°C. At such a low temperature, bulk nucleation of GeSn in Al layers is significantly suppressed, and (100)-oriented interface nucleation becomes dominant. On the other hand, growth rate becomes high by Sn-doping effects. As a result, formation of (100)-oriented large-grain (>10 μm) Sn-doped Ge (Sn concentration: 2%) crystals on insulating substrates becomes possible at a low temperature (250°C). This technique will be useful to realize advanced flexible electronics.

UR - http://www.scopus.com/inward/record.url?scp=84987650408&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84987650408&partnerID=8YFLogxK

U2 - 10.1109/AM-FPD.2016.7543662

DO - 10.1109/AM-FPD.2016.7543662

M3 - Conference contribution

SP - 191

EP - 193

BT - Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

ER -