Large magnetoresistance and volume expansion associated with valence transition in Eu(Rh1-xIrx)2Si2

Akihiro Mitsuda, Takumi Fujimoto, Eigo Kishaba, Suguru Hamano, Akihiro Kondo, Koichi Kindo, Hirofumi Wada

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3 Citations (Scopus)

Abstract

We report lattice parameters as a function of temperature, magnetization curves, and magnetoresistance of polycrystalline samples of Eu(Rh1-xIrx)2Si2. The lattice parameters a and c for x = 0.3, 0.4, and 0.5 jump at around the valence transition temperature Tv. For these samples, the high-temperature (larger a, c) and low-temperature (smaller a, c) phases, the volume fraction of which changes with temperature, coexist at around Tv, which means that the valence transition is of the first order. The magnetization curves of x = 0.3, 0.4, and 0.5 at T = 4.2 K exhibit a metamagnetic transition with a large hysteresis, implying a first-order field-induced valence transition. The transition field Bv is proportional to Tv, Bv = αTv with α = 0.36 T=K. For x = 0.3, a large negative magnetoresistance associated with the field-induced valence transition is observed. The origin of the negative magnetoresistance is discussed.

Original languageEnglish
Article number124703
Journaljournal of the physical society of japan
Volume85
Issue number12
DOIs
Publication statusPublished - Dec 15 2016

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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