TY - JOUR
T1 - Large metal halide perovskite crystals for field-effect transistor applications
AU - Matsushima, Toshinori
AU - Leyden, Matthew R.
AU - Fujihara, Takashi
AU - Qin, Chuanjiang
AU - Sandanayaka, Atula S.D.
AU - Adachi, Chihaya
N1 - Funding Information:
We thank Dr. W. J. Potscavage, Jr. at Kyushu University for his assistance with the preparation of this manuscript. This work was supported by the Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project (JST ERATO Grant No. JPMJER1305), by the International Institute for Carbon Neutral Energy Research (WPI-I2CNER) sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), by JSPS KAKENHI (Grant Nos. JP15K14149 and JP16H04192), and by The Canon Foundation.
Publisher Copyright:
© 2019 Author(s).
PY - 2019/9/16
Y1 - 2019/9/16
N2 - The material 2-phenylethylammonium tin iodide perovskite (C6H5C2H4NH3)2SnI4 [abbreviated as (PEA)2SnI4] has shown promising performance as a polycrystalline semiconductor for field-effect transistors (FETs). However, grain boundaries and structural disorder in polycrystalline films limit performance, and so the fundamental upper bounds of the material are yet to be studied. Here, we prepared large crystals of (PEA)2SnI4 for FETs and demonstrated carrier mobilities of 40 cm2 V-1 s-1 or higher, although with a low fabrication yield (< 1%). Our crystal FETs were very stable when stored in air and when operated under a bias in vacuum. The FET characteristics were superior to those of reported FETs based on polycrystalline perovskite films, and these results contribute to a better understanding of basic carrier transport mechanisms in hybrid perovskite materials.
AB - The material 2-phenylethylammonium tin iodide perovskite (C6H5C2H4NH3)2SnI4 [abbreviated as (PEA)2SnI4] has shown promising performance as a polycrystalline semiconductor for field-effect transistors (FETs). However, grain boundaries and structural disorder in polycrystalline films limit performance, and so the fundamental upper bounds of the material are yet to be studied. Here, we prepared large crystals of (PEA)2SnI4 for FETs and demonstrated carrier mobilities of 40 cm2 V-1 s-1 or higher, although with a low fabrication yield (< 1%). Our crystal FETs were very stable when stored in air and when operated under a bias in vacuum. The FET characteristics were superior to those of reported FETs based on polycrystalline perovskite films, and these results contribute to a better understanding of basic carrier transport mechanisms in hybrid perovskite materials.
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U2 - 10.1063/1.5116411
DO - 10.1063/1.5116411
M3 - Article
AN - SCOPUS:85072582551
VL - 115
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
M1 - 120601
ER -