Large metal halide perovskite crystals for field-effect transistor applications

Toshinori Matsushima, Matthew R. Leyden, Takashi Fujihara, Chuanjiang Qin, Atula S.D. Sandanayaka, Chihaya Adachi

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

The material 2-phenylethylammonium tin iodide perovskite (C6H5C2H4NH3)2SnI4 [abbreviated as (PEA)2SnI4] has shown promising performance as a polycrystalline semiconductor for field-effect transistors (FETs). However, grain boundaries and structural disorder in polycrystalline films limit performance, and so the fundamental upper bounds of the material are yet to be studied. Here, we prepared large crystals of (PEA)2SnI4 for FETs and demonstrated carrier mobilities of 40 cm2 V-1 s-1 or higher, although with a low fabrication yield (< 1%). Our crystal FETs were very stable when stored in air and when operated under a bias in vacuum. The FET characteristics were superior to those of reported FETs based on polycrystalline perovskite films, and these results contribute to a better understanding of basic carrier transport mechanisms in hybrid perovskite materials.

Original languageEnglish
Article number120601
JournalApplied Physics Letters
Volume115
Issue number12
DOIs
Publication statusPublished - Sep 16 2019

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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