Large remanent polarization of Bi 4Ti 3O 12-based thin films modified by the site engineering technique

Takayuki Watanabe, Takashi Kojima, Tomohiro Sakai, Hiroshi Funakubo, Minoru Osada, Yuji Noguchi, Masaru Miyayama

Research output: Contribution to journalArticle

98 Citations (Scopus)

Abstract

The site engineering approach based on site-selective substitutions was utilized to improve the ferroelectric properties in Bi 4Ti 3O 12 thin film. Thin films of (Bi 4-xNd x)(Ti 3-yV y)O 12 with both A- and B-sites substitutions were deposited on (111)Pt/Ti/SiO 2/Si substrates at 600°C by metalorganic chemical vapor deposition. Although the films substituted for the A site by Nd, (Bi 4-xNd x)Ti 3O 12, showed no significant improvement in ferroelectricity, additional substitution for the B site by V contributed to a large ferroelectricity. Superior properties compared to (Bi 4-xLa x)(Ti 3-yV y)O 12 were confirmed for (Bi 4-xNd x)(Ti 3-yV y)O 12 films. We also showed orientation control using Ru-based substrates. (104)-preferred orientation was obtained on (111)Pt/Ti/SiO 2/Si substrates, while (110) and (111) orientations with an advantage for large polarization were stabilized on (001)Ru/SiO 2/Si substrates and actually a larger ferroelectricity was obtained; the remanent polarization (2P r) and coercive field (2E c) of the (Bi 3.35Nd 0.65)(Ti 2.87V 0.13)O 12 film were 34 μC/cm 2 and 290 kV/cm, respectively. No fatigue phenomenon was also observed for the (Bi 3.35Nd 0.65)(Ti 2.87V 0.13)O 12 film up to 10 9 switching cycles.

Original languageEnglish
Pages (from-to)1518-1521
Number of pages4
JournalJournal of Applied Physics
Volume92
Issue number3
DOIs
Publication statusPublished - Aug 1 2002
Externally publishedYes

Fingerprint

ferroelectricity
engineering
polarization
substitutes
thin films
metalorganic chemical vapor deposition
cycles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Large remanent polarization of Bi 4Ti 3O 12-based thin films modified by the site engineering technique. / Watanabe, Takayuki; Kojima, Takashi; Sakai, Tomohiro; Funakubo, Hiroshi; Osada, Minoru; Noguchi, Yuji; Miyayama, Masaru.

In: Journal of Applied Physics, Vol. 92, No. 3, 01.08.2002, p. 1518-1521.

Research output: Contribution to journalArticle

Watanabe, Takayuki ; Kojima, Takashi ; Sakai, Tomohiro ; Funakubo, Hiroshi ; Osada, Minoru ; Noguchi, Yuji ; Miyayama, Masaru. / Large remanent polarization of Bi 4Ti 3O 12-based thin films modified by the site engineering technique. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 3. pp. 1518-1521.
@article{46c8cd6076dc4703a137d85feb98a1d2,
title = "Large remanent polarization of Bi 4Ti 3O 12-based thin films modified by the site engineering technique",
abstract = "The site engineering approach based on site-selective substitutions was utilized to improve the ferroelectric properties in Bi 4Ti 3O 12 thin film. Thin films of (Bi 4-xNd x)(Ti 3-yV y)O 12 with both A- and B-sites substitutions were deposited on (111)Pt/Ti/SiO 2/Si substrates at 600°C by metalorganic chemical vapor deposition. Although the films substituted for the A site by Nd, (Bi 4-xNd x)Ti 3O 12, showed no significant improvement in ferroelectricity, additional substitution for the B site by V contributed to a large ferroelectricity. Superior properties compared to (Bi 4-xLa x)(Ti 3-yV y)O 12 were confirmed for (Bi 4-xNd x)(Ti 3-yV y)O 12 films. We also showed orientation control using Ru-based substrates. (104)-preferred orientation was obtained on (111)Pt/Ti/SiO 2/Si substrates, while (110) and (111) orientations with an advantage for large polarization were stabilized on (001)Ru/SiO 2/Si substrates and actually a larger ferroelectricity was obtained; the remanent polarization (2P r) and coercive field (2E c) of the (Bi 3.35Nd 0.65)(Ti 2.87V 0.13)O 12 film were 34 μC/cm 2 and 290 kV/cm, respectively. No fatigue phenomenon was also observed for the (Bi 3.35Nd 0.65)(Ti 2.87V 0.13)O 12 film up to 10 9 switching cycles.",
author = "Takayuki Watanabe and Takashi Kojima and Tomohiro Sakai and Hiroshi Funakubo and Minoru Osada and Yuji Noguchi and Masaru Miyayama",
year = "2002",
month = "8",
day = "1",
doi = "10.1063/1.1491594",
language = "English",
volume = "92",
pages = "1518--1521",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Large remanent polarization of Bi 4Ti 3O 12-based thin films modified by the site engineering technique

AU - Watanabe, Takayuki

AU - Kojima, Takashi

AU - Sakai, Tomohiro

AU - Funakubo, Hiroshi

AU - Osada, Minoru

AU - Noguchi, Yuji

AU - Miyayama, Masaru

PY - 2002/8/1

Y1 - 2002/8/1

N2 - The site engineering approach based on site-selective substitutions was utilized to improve the ferroelectric properties in Bi 4Ti 3O 12 thin film. Thin films of (Bi 4-xNd x)(Ti 3-yV y)O 12 with both A- and B-sites substitutions were deposited on (111)Pt/Ti/SiO 2/Si substrates at 600°C by metalorganic chemical vapor deposition. Although the films substituted for the A site by Nd, (Bi 4-xNd x)Ti 3O 12, showed no significant improvement in ferroelectricity, additional substitution for the B site by V contributed to a large ferroelectricity. Superior properties compared to (Bi 4-xLa x)(Ti 3-yV y)O 12 were confirmed for (Bi 4-xNd x)(Ti 3-yV y)O 12 films. We also showed orientation control using Ru-based substrates. (104)-preferred orientation was obtained on (111)Pt/Ti/SiO 2/Si substrates, while (110) and (111) orientations with an advantage for large polarization were stabilized on (001)Ru/SiO 2/Si substrates and actually a larger ferroelectricity was obtained; the remanent polarization (2P r) and coercive field (2E c) of the (Bi 3.35Nd 0.65)(Ti 2.87V 0.13)O 12 film were 34 μC/cm 2 and 290 kV/cm, respectively. No fatigue phenomenon was also observed for the (Bi 3.35Nd 0.65)(Ti 2.87V 0.13)O 12 film up to 10 9 switching cycles.

AB - The site engineering approach based on site-selective substitutions was utilized to improve the ferroelectric properties in Bi 4Ti 3O 12 thin film. Thin films of (Bi 4-xNd x)(Ti 3-yV y)O 12 with both A- and B-sites substitutions were deposited on (111)Pt/Ti/SiO 2/Si substrates at 600°C by metalorganic chemical vapor deposition. Although the films substituted for the A site by Nd, (Bi 4-xNd x)Ti 3O 12, showed no significant improvement in ferroelectricity, additional substitution for the B site by V contributed to a large ferroelectricity. Superior properties compared to (Bi 4-xLa x)(Ti 3-yV y)O 12 were confirmed for (Bi 4-xNd x)(Ti 3-yV y)O 12 films. We also showed orientation control using Ru-based substrates. (104)-preferred orientation was obtained on (111)Pt/Ti/SiO 2/Si substrates, while (110) and (111) orientations with an advantage for large polarization were stabilized on (001)Ru/SiO 2/Si substrates and actually a larger ferroelectricity was obtained; the remanent polarization (2P r) and coercive field (2E c) of the (Bi 3.35Nd 0.65)(Ti 2.87V 0.13)O 12 film were 34 μC/cm 2 and 290 kV/cm, respectively. No fatigue phenomenon was also observed for the (Bi 3.35Nd 0.65)(Ti 2.87V 0.13)O 12 film up to 10 9 switching cycles.

UR - http://www.scopus.com/inward/record.url?scp=0036678760&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036678760&partnerID=8YFLogxK

U2 - 10.1063/1.1491594

DO - 10.1063/1.1491594

M3 - Article

AN - SCOPUS:0036678760

VL - 92

SP - 1518

EP - 1521

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -