Large-scale electronic structure calculation of Eu doped BaMgAI 10O17: Effects of defects on its luminescence properties

Hiroaki Onuma, Hiroaki Tanno, Hideyuki Tsuboi, Michihisa Koyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Hiroshi Kajiyama, Tsutae Shinoda, Akira Miyamoto

Research output: Contribution to conferencePaper

Abstract

We have employed tight-binding quantum chemistry method involving a new calculation method for rare earth elements to calculate the electronic structure of BaMgAI10O17:Eu2+ (BAM). The new method considers the particular nature of the 4f orbitals which is specified by their location respect the nuclei and their degeneration properties. Our calculation results indicate that the oxygen vacancy in BAM cause the red-shift of luminescence color and the degradation of brightness.

Original languageEnglish
Pages373-376
Number of pages4
Publication statusPublished - 2006
Event13th International Display Workshops, IDW '06 - Otsu, Japan
Duration: Dec 6 2006Dec 6 2006

Other

Other13th International Display Workshops, IDW '06
CountryJapan
CityOtsu
Period12/6/0612/6/06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Onuma, H., Tanno, H., Tsuboi, H., Koyama, M., Endou, A., Takaba, H., Kubo, M., Del Carpio, C. A., Kajiyama, H., Shinoda, T., & Miyamoto, A. (2006). Large-scale electronic structure calculation of Eu doped BaMgAI 10O17: Effects of defects on its luminescence properties. 373-376. Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan.