Large single-crystal Ge-on-insulator by thermally-assisted (~400 °C) Si-seeded-pulse-laser annealing

T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, M. Miyao

Research output: Contribution to journalArticle

Abstract

Low temperature (≤400 °C) formation of orientation-controlled large (≥10 µm) Ge-on-insulator (GOI) structures is desired to fabricate 3-dimensional large-scale integrated circuits (LSIs), where Ge-based functional devices are stacked on Si-LSIs. For this purpose, Si-seeded pulse-laser annealing (PLA) combined with low-temperature substrate heating (≤400 °C) has been developed. Here, a-Ge stripes on Si substrates partially covered with insulating films are subjected to PLA, where single edges of the a-Ge stripes directly contact Si-seeding substrates through opening windows of insulating films. PLA at room temperature generates lateral growth of Ge layers from Si-seeding substrates. However, the growth length is short (~1 µm), which is attributed to very short melting time. To increase the melting time, low-temperature (≤400 °C) substrate heating during PLA is examined. As a result, very large (~20 µm) orientation-controlled GOI is obtained by combining substrate heating (400 °C) with PLA. Detailed electron microscopy analysis reveals very high crystallinity of the grown layers. Consequently, high-quality rapid-melting growth of Ge becomes possible at a low processing temperature of ~400 °C. This thermally-assisted (~400 °C) Si-seeded PLA will facilitate realization of 3-dimensional LSIs.

Original languageEnglish
Pages (from-to)8-11
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume70
DOIs
Publication statusPublished - Nov 1 2017

Fingerprint

laser annealing
Laser pulses
insulators
Single crystals
Annealing
single crystals
Substrates
pulses
integrated circuits
Integrated circuits
Melting
melting
inoculation
Heating
Temperature
pulse heating
heating
Electron microscopy
crystallinity
electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Large single-crystal Ge-on-insulator by thermally-assisted (~400 °C) Si-seeded-pulse-laser annealing. / Sadoh, T.; Kurosawa, M.; Heya, A.; Matsuo, N.; Miyao, M.

In: Materials Science in Semiconductor Processing, Vol. 70, 01.11.2017, p. 8-11.

Research output: Contribution to journalArticle

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