Large spin accumulation with long spin diffusion length in Cu/MgO/permalloy lateral spin valves

Taro Wakamura, Kohei Ohnishi, Yasuhiro Niimi, Yoshichika Otani

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We study the effect of interface resistance on the spin injection and detection efficiency in Cu/MgO/permalloy (Py) lateral spin valve devices. Insertion of the MgO layer enhances the spin accumulation by a factor of ten at 10 K: the maximum value is 10m at the interface resistance of 1.7 × 10-1 ω(μm)2. The spin diffusion length of Cu reaches 1.3 μm at 10 K, which is twice larger than that of Ag/MgO/Py spin valves. As the interface resistance increases furthermore, the spin accumulation exponentially decreases. This can be explained by the large reduction of the spin polarization in the insulating layer.

Original languageEnglish
Article number063002
JournalApplied Physics Express
Volume4
Issue number6
DOIs
Publication statusPublished - Jun 1 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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