Abstract
Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on magnesium oxide [MgO (100)] substrates at a substrate temperature of 800°C. Besides, p-type SiC was prepared by laser assisted doping of Al in the PLD grown intrinsic SiC film. The SiC phases, in the grown thin films, were confirmed by x-ray diffraction (XRD), Si–C bond structure is identified by Fourier-transform infrared spectroscopy spectrum analysis. Measurements based on the XRD and Raman scattering techniques confirmed improvement in crystallization of 3C-SiC thin films with the laser assisted doping. The studies on I–V characteristics by two probe technique, elemental analysis by energy dispersion spectrum, binding energy by x-ray photoelectron spectroscopy and carrier concentration by Hall effect, ensured Al doping in SiC thin film. From the UV–visible NIR spectroscopic analysis, the optical bandgap of the PLD grown 3C-SiC was obtained. Numerical analysis of temperature and carrier concentration distribution is simulated to understand the mechanism of laser assisted doping.
| Original language | English |
|---|---|
| Pages (from-to) | 3468-3478 |
| Number of pages | 11 |
| Journal | Journal of Electronic Materials |
| Volume | 48 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Jun 15 2019 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Laser Assisted Doping of Silicon Carbide Thin Films Grown by Pulsed Laser Deposition. / Paneerselvam, Emmanuel; Lakshmi Narayanan, Vinoth Kumar; Vasa, Nilesh J.; Higashihata, Mitsuhiro; Nakamura, Daisuke; Ikenoue, Hiroshi; Ramachandra Rao, M. S.
In: Journal of Electronic Materials, Vol. 48, No. 6, 15.06.2019, p. 3468-3478.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Laser Assisted Doping of Silicon Carbide Thin Films Grown by Pulsed Laser Deposition
AU - Paneerselvam, Emmanuel
AU - Lakshmi Narayanan, Vinoth Kumar
AU - Vasa, Nilesh J.
AU - Higashihata, Mitsuhiro
AU - Nakamura, Daisuke
AU - Ikenoue, Hiroshi
AU - Ramachandra Rao, M. S.
PY - 2019/6/15
Y1 - 2019/6/15
N2 - Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on magnesium oxide [MgO (100)] substrates at a substrate temperature of 800°C. Besides, p-type SiC was prepared by laser assisted doping of Al in the PLD grown intrinsic SiC film. The SiC phases, in the grown thin films, were confirmed by x-ray diffraction (XRD), Si–C bond structure is identified by Fourier-transform infrared spectroscopy spectrum analysis. Measurements based on the XRD and Raman scattering techniques confirmed improvement in crystallization of 3C-SiC thin films with the laser assisted doping. The studies on I–V characteristics by two probe technique, elemental analysis by energy dispersion spectrum, binding energy by x-ray photoelectron spectroscopy and carrier concentration by Hall effect, ensured Al doping in SiC thin film. From the UV–visible NIR spectroscopic analysis, the optical bandgap of the PLD grown 3C-SiC was obtained. Numerical analysis of temperature and carrier concentration distribution is simulated to understand the mechanism of laser assisted doping.
AB - Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on magnesium oxide [MgO (100)] substrates at a substrate temperature of 800°C. Besides, p-type SiC was prepared by laser assisted doping of Al in the PLD grown intrinsic SiC film. The SiC phases, in the grown thin films, were confirmed by x-ray diffraction (XRD), Si–C bond structure is identified by Fourier-transform infrared spectroscopy spectrum analysis. Measurements based on the XRD and Raman scattering techniques confirmed improvement in crystallization of 3C-SiC thin films with the laser assisted doping. The studies on I–V characteristics by two probe technique, elemental analysis by energy dispersion spectrum, binding energy by x-ray photoelectron spectroscopy and carrier concentration by Hall effect, ensured Al doping in SiC thin film. From the UV–visible NIR spectroscopic analysis, the optical bandgap of the PLD grown 3C-SiC was obtained. Numerical analysis of temperature and carrier concentration distribution is simulated to understand the mechanism of laser assisted doping.
UR - http://www.scopus.com/inward/record.url?scp=85062688973&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85062688973&partnerID=8YFLogxK
U2 - 10.1007/s11664-019-07097-7
DO - 10.1007/s11664-019-07097-7
M3 - Article
AN - SCOPUS:85062688973
VL - 48
SP - 3468
EP - 3478
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 6
ER -