TY - JOUR
T1 - Laser Assisted Doping of Silicon Carbide Thin Films Grown by Pulsed Laser Deposition
AU - Paneerselvam, Emmanuel
AU - Lakshmi Narayanan, Vinoth Kumar
AU - Vasa, Nilesh J.
AU - Higashihata, Mitsuhiro
AU - Nakamura, Daisuke
AU - Ikenoue, Hiroshi
AU - Ramachandra Rao, M. S.
N1 - Funding Information:
The authors are grateful to Mr. Xavier (Universal Carborundum Limited) for providing SiC powder. Dr. R. Jayaganthan, IIT Roorkee is thanked for providing help in preparation of SPS SiC targets. Authors also gratefully acknowledge the thin film characterisation facility provided by Dr. I. A. Palani at IIT Indore and Dr. A. Subrahmanyam at IIT Madras. Authors are thankful to Hamdan Mohammed Ridwan for his help in the theoretical analysis. Part of this work is supported by DSTJSPS Project (DST/INT/JSPS/P-244/2017). The authors like to acknowledge the help received for material characterization at the Nano Functional Materials Technology Center in IIT Madras established by the Department of Science and Technology (DST) of India [Grant No. SR/NM/NAT-02/2005].
Funding Information:
The authors are grateful to Mr. Xavier (Universal Carborundum Limited) for providing SiC powder. Dr. R. Jayaganthan, IIT Roorkee is thanked for providing help in preparation of SPS SiC targets. Authors also gratefully acknowledge the thin film characterisation facility provided by Dr. I. A. Palani at IIT Indore and Dr. A. Subrahmanyam at IIT Madras. Authors are thankful to Hamdan Mohammed Ridwan for his help in the theoretical analysis. Part of this work is supported by DST-JSPS Project (DST/INT/JSPS/P-244/2017). The authors like to acknowledge the help received for material characterization at the Nano Functional Materials Technology Center in IIT Madras established by the Department of Science and Technology (DST) of India [Grant No. SR/NM/NAT-02/2005].
Publisher Copyright:
© 2019, The Minerals, Metals & Materials Society.
PY - 2019/6/15
Y1 - 2019/6/15
N2 - Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on magnesium oxide [MgO (100)] substrates at a substrate temperature of 800°C. Besides, p-type SiC was prepared by laser assisted doping of Al in the PLD grown intrinsic SiC film. The SiC phases, in the grown thin films, were confirmed by x-ray diffraction (XRD), Si–C bond structure is identified by Fourier-transform infrared spectroscopy spectrum analysis. Measurements based on the XRD and Raman scattering techniques confirmed improvement in crystallization of 3C-SiC thin films with the laser assisted doping. The studies on I–V characteristics by two probe technique, elemental analysis by energy dispersion spectrum, binding energy by x-ray photoelectron spectroscopy and carrier concentration by Hall effect, ensured Al doping in SiC thin film. From the UV–visible NIR spectroscopic analysis, the optical bandgap of the PLD grown 3C-SiC was obtained. Numerical analysis of temperature and carrier concentration distribution is simulated to understand the mechanism of laser assisted doping.
AB - Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on magnesium oxide [MgO (100)] substrates at a substrate temperature of 800°C. Besides, p-type SiC was prepared by laser assisted doping of Al in the PLD grown intrinsic SiC film. The SiC phases, in the grown thin films, were confirmed by x-ray diffraction (XRD), Si–C bond structure is identified by Fourier-transform infrared spectroscopy spectrum analysis. Measurements based on the XRD and Raman scattering techniques confirmed improvement in crystallization of 3C-SiC thin films with the laser assisted doping. The studies on I–V characteristics by two probe technique, elemental analysis by energy dispersion spectrum, binding energy by x-ray photoelectron spectroscopy and carrier concentration by Hall effect, ensured Al doping in SiC thin film. From the UV–visible NIR spectroscopic analysis, the optical bandgap of the PLD grown 3C-SiC was obtained. Numerical analysis of temperature and carrier concentration distribution is simulated to understand the mechanism of laser assisted doping.
UR - http://www.scopus.com/inward/record.url?scp=85062688973&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85062688973&partnerID=8YFLogxK
U2 - 10.1007/s11664-019-07097-7
DO - 10.1007/s11664-019-07097-7
M3 - Article
AN - SCOPUS:85062688973
VL - 48
SP - 3468
EP - 3478
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 6
ER -