Laser direct patterning of Si films by Ag-induced layer exchange

Masahiro Kiyooka; Hiroshi Ikenoue

doi:10.1109/IMFEDK.2011.5944850

Laser direct patterning of Si films by Ag-induced layer exchange

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Direct patterning of Si films is one of promising methods for TFT display fabrication to achieve low cost. We have proposed laser direct patterning of Si films by Ag-induced layer exchange. In this method, an Ag film was deposited for middle layer between an a-Si film and a substrate. Next, pulsed laser was locally irradiated to the Si/Ag film, and the Ag film was segregated to Si film surface. After that, the Ag film at irradiation area and the Ag film of middle layer at non-irradiation area were etched off by nitric acid treatment. In the result, direct patterning of Si thin films can be achieved at laser irradiation area. Moreover, in order to observe segregation behavior of Ag to Si surface, CW laser was coaxially inserted to surface with the pulsed laser, and reflective intensity of the CW laser was measured by Si-photo detector.

Original language	English
Title of host publication	IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai
Pages	72-73
Number of pages	2
DOIs	https://doi.org/10.1109/IMFEDK.2011.5944850
Publication status	Published - 2011
Externally published	Yes
Event	9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011 - Osaka, Japan Duration: May 19 2011 → May 20 2011

Other

Other	9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011
Country/Territory	Japan
City	Osaka
Period	5/19/11 → 5/20/11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/IMFEDK.2011.5944850

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title = "Laser direct patterning of Si films by Ag-induced layer exchange",

abstract = "Direct patterning of Si films is one of promising methods for TFT display fabrication to achieve low cost. We have proposed laser direct patterning of Si films by Ag-induced layer exchange. In this method, an Ag film was deposited for middle layer between an a-Si film and a substrate. Next, pulsed laser was locally irradiated to the Si/Ag film, and the Ag film was segregated to Si film surface. After that, the Ag film at irradiation area and the Ag film of middle layer at non-irradiation area were etched off by nitric acid treatment. In the result, direct patterning of Si thin films can be achieved at laser irradiation area. Moreover, in order to observe segregation behavior of Ag to Si surface, CW laser was coaxially inserted to surface with the pulsed laser, and reflective intensity of the CW laser was measured by Si-photo detector.",

author = "Masahiro Kiyooka and Hiroshi Ikenoue",

year = "2011",

doi = "10.1109/IMFEDK.2011.5944850",

language = "English",

isbn = "9781612841465",

pages = "72--73",

booktitle = "IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai",

note = "9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011 ; Conference date: 19-05-2011 Through 20-05-2011",

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T1 - Laser direct patterning of Si films by Ag-induced layer exchange

AU - Kiyooka, Masahiro

AU - Ikenoue, Hiroshi

PY - 2011

Y1 - 2011

N2 - Direct patterning of Si films is one of promising methods for TFT display fabrication to achieve low cost. We have proposed laser direct patterning of Si films by Ag-induced layer exchange. In this method, an Ag film was deposited for middle layer between an a-Si film and a substrate. Next, pulsed laser was locally irradiated to the Si/Ag film, and the Ag film was segregated to Si film surface. After that, the Ag film at irradiation area and the Ag film of middle layer at non-irradiation area were etched off by nitric acid treatment. In the result, direct patterning of Si thin films can be achieved at laser irradiation area. Moreover, in order to observe segregation behavior of Ag to Si surface, CW laser was coaxially inserted to surface with the pulsed laser, and reflective intensity of the CW laser was measured by Si-photo detector.

AB - Direct patterning of Si films is one of promising methods for TFT display fabrication to achieve low cost. We have proposed laser direct patterning of Si films by Ag-induced layer exchange. In this method, an Ag film was deposited for middle layer between an a-Si film and a substrate. Next, pulsed laser was locally irradiated to the Si/Ag film, and the Ag film was segregated to Si film surface. After that, the Ag film at irradiation area and the Ag film of middle layer at non-irradiation area were etched off by nitric acid treatment. In the result, direct patterning of Si thin films can be achieved at laser irradiation area. Moreover, in order to observe segregation behavior of Ag to Si surface, CW laser was coaxially inserted to surface with the pulsed laser, and reflective intensity of the CW laser was measured by Si-photo detector.

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BT - IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai

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ER -

Laser direct patterning of Si films by Ag-induced layer exchange

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