TY - JOUR
T1 - Laser-induced novel ohmic contact formation for effective charge collection in diamond detectors
AU - Abubakr, Eslam
AU - Ohmagari, Shinya
AU - Zkria, Abdelrahman
AU - Ikenoue, Hiroshi
AU - Yoshitake, Tsuyoshi
N1 - Funding Information:
This study was supported by the Japan Society for the Promotion of Science (JSPS KAKENHI), Grant No. JP19H02436 , and supported in part by JAEA Nuclear Energy S&T and Human ResourceDevelopment Project through concentrating wisdom , Grant No. JPJA19B19210378 .
Publisher Copyright:
© 2021 Elsevier Ltd
PY - 2022/3/1
Y1 - 2022/3/1
N2 - In this study, we employed an authentic process for the device fabrication of diamond detectors, wherein thin, highly conductive surface layers were processed in bulk diamond substrate using a nanosecond-pulsed excimer laser with liquid-immersion irradiation. The incorporation of high-concentration phosphorus dopants at 40 nm under the irradiated surface characterized the irradiated areas with much lower electrical resistivity, which was adequate for demonstrating ohmic contacts even with the tungsten probe heads at room temperature. In particular, a low activation energy (<54 meV) of irradiated surfaces enabled space-charge-free build-up effects between the diamond film and external connection. Moreover, the electrical characterization revealed an improved carrier-collection efficiency that was more than three orders of magnitude greater than that of typical Ti/Au diamond ohmic contacts, including a high-response speed of the current pulse to irradiation burst. The laser treatment of diamond films displayed promising results for the fabrication of diamond detectors with minimum power consumption, fastest process rate, and highest visible-light detection that could maintain smooth and stable charge transport. The process allowed selective, patterned doping of the diamond surface, which could be electrically contacted more readily. Furthermore, they could be operated at high temperatures and in radiation-harsh environments with sustainable efficiency.
AB - In this study, we employed an authentic process for the device fabrication of diamond detectors, wherein thin, highly conductive surface layers were processed in bulk diamond substrate using a nanosecond-pulsed excimer laser with liquid-immersion irradiation. The incorporation of high-concentration phosphorus dopants at 40 nm under the irradiated surface characterized the irradiated areas with much lower electrical resistivity, which was adequate for demonstrating ohmic contacts even with the tungsten probe heads at room temperature. In particular, a low activation energy (<54 meV) of irradiated surfaces enabled space-charge-free build-up effects between the diamond film and external connection. Moreover, the electrical characterization revealed an improved carrier-collection efficiency that was more than three orders of magnitude greater than that of typical Ti/Au diamond ohmic contacts, including a high-response speed of the current pulse to irradiation burst. The laser treatment of diamond films displayed promising results for the fabrication of diamond detectors with minimum power consumption, fastest process rate, and highest visible-light detection that could maintain smooth and stable charge transport. The process allowed selective, patterned doping of the diamond surface, which could be electrically contacted more readily. Furthermore, they could be operated at high temperatures and in radiation-harsh environments with sustainable efficiency.
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U2 - 10.1016/j.mssp.2021.106370
DO - 10.1016/j.mssp.2021.106370
M3 - Article
AN - SCOPUS:85120405451
VL - 139
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
M1 - 106370
ER -