Laser irradiation effect of ZnO nanowires and GaN thin film for fabrication of hetero p-n junction

K. Kubo, K. Okazaki, T. Shimogaki, K. Tsuta, Daisuke Nakamura, M. Higashihata, T. Okada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the laser nano-welding between n-type ZnO nanowires and the ptype GaN thin film for the realization of the hetero p-n junction with low thermal loading. When the ZnO nanowires were irradiated with 355 nm laser beam at a fluence of 0.25 J/cm2, only a tip of the nanowires was melted due to the field enhancement effect near the tip of the nanowires and a small bead with a diameter of 40 nm was formed at the tip of each nanowires. This phenomenon was applied to weld the junction between the ZnO nanowires and a p-type GaN thin film, by irradiating the junction through the GaN film with 375 nm laser beam which is transparent for the p-type GaN thin film but opaque for the ZnO nanowires. As a result, the improvements of the I-V characteristics of the junction and the increment of the UV electro-luminescence intensity were clearly observed, demonstrating the effectiveness of the nano-welding in fabrication the hetero p-n junction between the ZnO nanowires and the GaN thin film.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Pages571-573
Number of pages3
Publication statusPublished - Dec 1 2011
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
Duration: Aug 28 2011Sep 1 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
CountryAustralia
CitySydney
Period8/28/119/1/11

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Laser irradiation effect of ZnO nanowires and GaN thin film for fabrication of hetero p-n junction'. Together they form a unique fingerprint.

  • Cite this

    Kubo, K., Okazaki, K., Shimogaki, T., Tsuta, K., Nakamura, D., Higashihata, M., & Okada, T. (2011). Laser irradiation effect of ZnO nanowires and GaN thin film for fabrication of hetero p-n junction. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 (pp. 571-573). (Optics InfoBase Conference Papers).