Laser irradiation effect of ZnO nanowires and GaN thin film for fabrication of hetero p-n junction

K. Kubo, K. Okazaki, T. Shimogaki, K. Tsuta, Daisuke Nakamura, M. Higashihata, T. Okada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the laser nano-welding between n-type ZnO nanowires and the ptype GaN thin film for the realization of the hetero p-n junction with low thermal loading. When the ZnO nanowires were irradiated with 355 nm laser beam at a fluence of 0.25 J/cm2, only a tip of the nanowires was melted due to the field enhancement effect near the tip of the nanowires and a small bead with a diameter of 40 nm was formed at the tip of each nanowires. This phenomenon was applied to weld the junction between the ZnO nanowires and a p-type GaN thin film, by irradiating the junction through the GaN film with 375 nm laser beam which is transparent for the p-type GaN thin film but opaque for the ZnO nanowires. As a result, the improvements of the I-V characteristics of the junction and the increment of the UV electro-luminescence intensity were clearly observed, demonstrating the effectiveness of the nano-welding in fabrication the hetero p-n junction between the ZnO nanowires and the GaN thin film.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Pages571-573
Number of pages3
Publication statusPublished - Dec 1 2011
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
Duration: Aug 28 2011Sep 1 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
CountryAustralia
CitySydney
Period8/28/119/1/11

Fingerprint

Laser beam effects
p-n junctions
Nanowires
nanowires
Fabrication
Thin films
fabrication
irradiation
thin films
lasers
welding
Laser beams
Welding
laser beams
Electroluminescence
beads
electroluminescence
fluence
Welds
Lasers

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Kubo, K., Okazaki, K., Shimogaki, T., Tsuta, K., Nakamura, D., Higashihata, M., & Okada, T. (2011). Laser irradiation effect of ZnO nanowires and GaN thin film for fabrication of hetero p-n junction. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 (pp. 571-573). (Optics InfoBase Conference Papers).

Laser irradiation effect of ZnO nanowires and GaN thin film for fabrication of hetero p-n junction. / Kubo, K.; Okazaki, K.; Shimogaki, T.; Tsuta, K.; Nakamura, Daisuke; Higashihata, M.; Okada, T.

Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011. 2011. p. 571-573 (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kubo, K, Okazaki, K, Shimogaki, T, Tsuta, K, Nakamura, D, Higashihata, M & Okada, T 2011, Laser irradiation effect of ZnO nanowires and GaN thin film for fabrication of hetero p-n junction. in Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011. Optics InfoBase Conference Papers, pp. 571-573, Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011, Sydney, Australia, 8/28/11.
Kubo K, Okazaki K, Shimogaki T, Tsuta K, Nakamura D, Higashihata M et al. Laser irradiation effect of ZnO nanowires and GaN thin film for fabrication of hetero p-n junction. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011. 2011. p. 571-573. (Optics InfoBase Conference Papers).
Kubo, K. ; Okazaki, K. ; Shimogaki, T. ; Tsuta, K. ; Nakamura, Daisuke ; Higashihata, M. ; Okada, T. / Laser irradiation effect of ZnO nanowires and GaN thin film for fabrication of hetero p-n junction. Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011. 2011. pp. 571-573 (Optics InfoBase Conference Papers).
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