Abstract
We have investigated the laser nano soldering between ZnO nanowires and the p-type GaN thin film for the realization of the hetero p-n junction with low thermal loading. When the ZnO nanowires were irradiated with 355 nm laser beam at a fluence of 0.25 J/cm2, only a tip of the nanowires was melted due to the field enhancement effect near the tip of the nanowires, and a small bead with a diameter of 40 nm was formed at the tip of each nanowires. This phenomenon was applied to solder the junction between the ZnO nanowires and a p-type GaN thin film, by irradiating the junction through the GaN film with 375 nm laser beam which is transparent for the p-type GaN thin film but opaque for the ZnO nano-wires. As a result, the improvements of the I-V characteristics of the junction and the increment of the UV electro-luminescence were clearly observed, demonstrating the effectiveness of the nano soldering in fabrication of the hetero p-n junction between the ZnO nanowires and the GaN thin film.
| Original language | English |
|---|---|
| Title of host publication | ZnO Nanocrystals and Allied Materials |
| Editors | M.S. Ramachandra Rao, Tatsuo Okada |
| Pages | 39-47 |
| Number of pages | 9 |
| DOIs | |
| Publication status | Published - Jan 1 2014 |
Publication series
| Name | Springer Series in Materials Science |
|---|---|
| Volume | 180 |
| ISSN (Print) | 0933-033X |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
Cite this
Laser nano-soldering of ZnO nanowires and GaN thin film for fabrication of Hetero p-n junction. / Shimogaki, Tetsuya; Ishida, Yuki; Okazaki, Kota; Higashihata, Mitsuhiro; Nakamura, Daisuke; Okada, Tatsuo.
ZnO Nanocrystals and Allied Materials. ed. / M.S. Ramachandra Rao; Tatsuo Okada. 2014. p. 39-47 (Springer Series in Materials Science; Vol. 180).Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Laser nano-soldering of ZnO nanowires and GaN thin film for fabrication of Hetero p-n junction
AU - Shimogaki, Tetsuya
AU - Ishida, Yuki
AU - Okazaki, Kota
AU - Higashihata, Mitsuhiro
AU - Nakamura, Daisuke
AU - Okada, Tatsuo
PY - 2014/1/1
Y1 - 2014/1/1
N2 - We have investigated the laser nano soldering between ZnO nanowires and the p-type GaN thin film for the realization of the hetero p-n junction with low thermal loading. When the ZnO nanowires were irradiated with 355 nm laser beam at a fluence of 0.25 J/cm2, only a tip of the nanowires was melted due to the field enhancement effect near the tip of the nanowires, and a small bead with a diameter of 40 nm was formed at the tip of each nanowires. This phenomenon was applied to solder the junction between the ZnO nanowires and a p-type GaN thin film, by irradiating the junction through the GaN film with 375 nm laser beam which is transparent for the p-type GaN thin film but opaque for the ZnO nano-wires. As a result, the improvements of the I-V characteristics of the junction and the increment of the UV electro-luminescence were clearly observed, demonstrating the effectiveness of the nano soldering in fabrication of the hetero p-n junction between the ZnO nanowires and the GaN thin film.
AB - We have investigated the laser nano soldering between ZnO nanowires and the p-type GaN thin film for the realization of the hetero p-n junction with low thermal loading. When the ZnO nanowires were irradiated with 355 nm laser beam at a fluence of 0.25 J/cm2, only a tip of the nanowires was melted due to the field enhancement effect near the tip of the nanowires, and a small bead with a diameter of 40 nm was formed at the tip of each nanowires. This phenomenon was applied to solder the junction between the ZnO nanowires and a p-type GaN thin film, by irradiating the junction through the GaN film with 375 nm laser beam which is transparent for the p-type GaN thin film but opaque for the ZnO nano-wires. As a result, the improvements of the I-V characteristics of the junction and the increment of the UV electro-luminescence were clearly observed, demonstrating the effectiveness of the nano soldering in fabrication of the hetero p-n junction between the ZnO nanowires and the GaN thin film.
UR - http://www.scopus.com/inward/record.url?scp=84884268508&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84884268508&partnerID=8YFLogxK
U2 - 10.1007/978-81-322-1160-0_2
DO - 10.1007/978-81-322-1160-0_2
M3 - Chapter
AN - SCOPUS:84884268508
SN - 9788132211594
T3 - Springer Series in Materials Science
SP - 39
EP - 47
BT - ZnO Nanocrystals and Allied Materials
A2 - Ramachandra Rao, M.S.
A2 - Okada, Tatsuo
ER -