TY - CHAP
T1 - Laser nano-soldering of ZnO nanowires and GaN thin film for fabrication of Hetero p-n junction
AU - Shimogaki, Tetsuya
AU - Ishida, Yuki
AU - Okazaki, Kota
AU - Higashihata, Mitsuhiro
AU - Nakamura, Daisuke
AU - Okada, Tatsuo
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid for Scientific Research from the Japan Society of Promotion of Science (No. 24656053) and Special Coordination Funds for Promoting Science and Technology from Japan Science and Technology Agency. We also would like to thank Research Laboratory for High Voltage Electron Microscopy, Kyushu University for TEM observation.
PY - 2014
Y1 - 2014
N2 - We have investigated the laser nano soldering between ZnO nanowires and the p-type GaN thin film for the realization of the hetero p-n junction with low thermal loading. When the ZnO nanowires were irradiated with 355 nm laser beam at a fluence of 0.25 J/cm2, only a tip of the nanowires was melted due to the field enhancement effect near the tip of the nanowires, and a small bead with a diameter of 40 nm was formed at the tip of each nanowires. This phenomenon was applied to solder the junction between the ZnO nanowires and a p-type GaN thin film, by irradiating the junction through the GaN film with 375 nm laser beam which is transparent for the p-type GaN thin film but opaque for the ZnO nano-wires. As a result, the improvements of the I-V characteristics of the junction and the increment of the UV electro-luminescence were clearly observed, demonstrating the effectiveness of the nano soldering in fabrication of the hetero p-n junction between the ZnO nanowires and the GaN thin film.
AB - We have investigated the laser nano soldering between ZnO nanowires and the p-type GaN thin film for the realization of the hetero p-n junction with low thermal loading. When the ZnO nanowires were irradiated with 355 nm laser beam at a fluence of 0.25 J/cm2, only a tip of the nanowires was melted due to the field enhancement effect near the tip of the nanowires, and a small bead with a diameter of 40 nm was formed at the tip of each nanowires. This phenomenon was applied to solder the junction between the ZnO nanowires and a p-type GaN thin film, by irradiating the junction through the GaN film with 375 nm laser beam which is transparent for the p-type GaN thin film but opaque for the ZnO nano-wires. As a result, the improvements of the I-V characteristics of the junction and the increment of the UV electro-luminescence were clearly observed, demonstrating the effectiveness of the nano soldering in fabrication of the hetero p-n junction between the ZnO nanowires and the GaN thin film.
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U2 - 10.1007/978-81-322-1160-0_2
DO - 10.1007/978-81-322-1160-0_2
M3 - Chapter
AN - SCOPUS:84884268508
SN - 9788132211594
T3 - Springer Series in Materials Science
SP - 39
EP - 47
BT - ZnO Nanocrystals and Allied Materials
A2 - Ramachandra Rao, M.S.
A2 - Okada, Tatsuo
ER -