Laser nano-soldering of ZnO nanowires and GaN thin film for fabrication of Hetero p-n junction

Tetsuya Shimogaki, Yuki Ishida, Kota Okazaki, Mitsuhiro Higashihata, Daisuke Nakamura, Tatsuo Okada

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

We have investigated the laser nano soldering between ZnO nanowires and the p-type GaN thin film for the realization of the hetero p-n junction with low thermal loading. When the ZnO nanowires were irradiated with 355 nm laser beam at a fluence of 0.25 J/cm2, only a tip of the nanowires was melted due to the field enhancement effect near the tip of the nanowires, and a small bead with a diameter of 40 nm was formed at the tip of each nanowires. This phenomenon was applied to solder the junction between the ZnO nanowires and a p-type GaN thin film, by irradiating the junction through the GaN film with 375 nm laser beam which is transparent for the p-type GaN thin film but opaque for the ZnO nano-wires. As a result, the improvements of the I-V characteristics of the junction and the increment of the UV electro-luminescence were clearly observed, demonstrating the effectiveness of the nano soldering in fabrication of the hetero p-n junction between the ZnO nanowires and the GaN thin film.

Original languageEnglish
Title of host publicationZnO Nanocrystals and Allied Materials
EditorsM.S. Ramachandra Rao, Tatsuo Okada
Pages39-47
Number of pages9
DOIs
Publication statusPublished - Jan 1 2014

Publication series

NameSpringer Series in Materials Science
Volume180
ISSN (Print)0933-033X

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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    Shimogaki, T., Ishida, Y., Okazaki, K., Higashihata, M., Nakamura, D., & Okada, T. (2014). Laser nano-soldering of ZnO nanowires and GaN thin film for fabrication of Hetero p-n junction. In M. S. Ramachandra Rao, & T. Okada (Eds.), ZnO Nanocrystals and Allied Materials (pp. 39-47). (Springer Series in Materials Science; Vol. 180). https://doi.org/10.1007/978-81-322-1160-0_2