TY - GEN
T1 - Lasing characteristics of optically pumped edge-emitting organic semiconductor laser with 4,4'-bis[(N-carbazolyl)styryl]biphenyl
AU - Shirakawa, Kenji
AU - Yamaoka, Hiroki
AU - Toriyama, Yasuhiro
AU - Takahashi, N. Shinichi
AU - Adachi, Chihaya
PY - 2009/12/1
Y1 - 2009/12/1
N2 - Recently, we have demonstrated optically-pumped edge-emitting organic laser devices consisting of a Alq3:DCM film (5% DCM) deposited onto a polished GaAs(100) substrate coated with an 1-μm-thick layer of RF sputtered SiO2 using a cleaving method. The threshold density was typically 3 μJ/cm2 in a sample with a cavity length of 5 mm. The internal loss α and the gain coefficient β were found to be about 10.5 cm -1 and 3.2 cm· μ J-1, respectively. BSB-Cz has quite-high efficiency as blue laser material. In this work, organic laser devices based on CBP:BSB-Cz films (6% BSB-Cz) were vacuum-deposited onto polished GaAs(100) substrates coated with an 1 μm-thick layer of RF sputtered SiO2. The cleaved samples were optically pumped by a N2 gas laser (wavelength: 337 nm) with a pulse width of 600 ps at a repetition rate of 20 Hz. We investigated the emission spectra, the emission intensity and the full width at half maximum (FWHM) by varying the excitation intensity. Pumping a sample with a resonator-length of 5 mm, the emission intensity was found to drastically increase at certain. The FWHM drastically narrowed as the emission intensity rapidly increased. The threshold density was 0.48 μ J/cm 2 for a resonator length of 5 mm. The internal loss α and the gain coefficient β were found to be about 3.1 cm-1 and 17.4 cm· μ J-1. We found that BSB-Cz is a higher efficiency lasing material than Alq3:DCM. The polarization characteristics and the relationship between threshold density and resonator length were also investigated.
AB - Recently, we have demonstrated optically-pumped edge-emitting organic laser devices consisting of a Alq3:DCM film (5% DCM) deposited onto a polished GaAs(100) substrate coated with an 1-μm-thick layer of RF sputtered SiO2 using a cleaving method. The threshold density was typically 3 μJ/cm2 in a sample with a cavity length of 5 mm. The internal loss α and the gain coefficient β were found to be about 10.5 cm -1 and 3.2 cm· μ J-1, respectively. BSB-Cz has quite-high efficiency as blue laser material. In this work, organic laser devices based on CBP:BSB-Cz films (6% BSB-Cz) were vacuum-deposited onto polished GaAs(100) substrates coated with an 1 μm-thick layer of RF sputtered SiO2. The cleaved samples were optically pumped by a N2 gas laser (wavelength: 337 nm) with a pulse width of 600 ps at a repetition rate of 20 Hz. We investigated the emission spectra, the emission intensity and the full width at half maximum (FWHM) by varying the excitation intensity. Pumping a sample with a resonator-length of 5 mm, the emission intensity was found to drastically increase at certain. The FWHM drastically narrowed as the emission intensity rapidly increased. The threshold density was 0.48 μ J/cm 2 for a resonator length of 5 mm. The internal loss α and the gain coefficient β were found to be about 3.1 cm-1 and 17.4 cm· μ J-1. We found that BSB-Cz is a higher efficiency lasing material than Alq3:DCM. The polarization characteristics and the relationship between threshold density and resonator length were also investigated.
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U2 - 10.1117/12.825451
DO - 10.1117/12.825451
M3 - Conference contribution
AN - SCOPUS:77955678596
SN - 9780819477057
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Organic Light Emitting Materials and Devices XIII
T2 - Organic Light Emitting Materials and Devices XIII
Y2 - 2 August 2009 through 4 August 2009
ER -