Abstract
The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 939-942 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 234 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Dec 1 2002 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces. / Brault, J.; Tanaka, S.; Sarigiannidou, E.; Nakagawa, H.; Rouvière, J. L.; Feuillet, G.; Daudin, B.
In: Physica Status Solidi (B) Basic Research, Vol. 234, No. 3, 01.12.2002, p. 939-942.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces
AU - Brault, J.
AU - Tanaka, S.
AU - Sarigiannidou, E.
AU - Nakagawa, H.
AU - Rouvière, J. L.
AU - Feuillet, G.
AU - Daudin, B.
PY - 2002/12/1
Y1 - 2002/12/1
N2 - The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.
AB - The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=0036930132&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036930132&partnerID=8YFLogxK
U2 - 10.1002/1521-3951(200212)234:3<939::AID-PSSB939>3.0.CO;2-L
DO - 10.1002/1521-3951(200212)234:3<939::AID-PSSB939>3.0.CO;2-L
M3 - Article
AN - SCOPUS:0036930132
VL - 234
SP - 939
EP - 942
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 3
ER -