Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

J. Brault, S. Tanaka, E. Sarigiannidou, H. Nakagawa, J. L. Rouvière, G. Feuillet, B. Daudin

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.

Original languageEnglish
Pages (from-to)939-942
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume234
Issue number3
DOIs
Publication statusPublished - Dec 1 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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