Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

J. Brault, S. Tanaka, E. Sarigiannidou, H. Nakagawa, J. L. Rouvière, G. Feuillet, B. Daudin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.

Original languageEnglish
Pages (from-to)939-942
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume234
Issue number3
DOIs
Publication statusPublished - Dec 1 2002
Externally publishedYes

Fingerprint

Spatial distribution
Semiconductor quantum dots
bunching
periodic variations
flat surfaces
spatial distribution
Substrates
alignment
quantum dots
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces. / Brault, J.; Tanaka, S.; Sarigiannidou, E.; Nakagawa, H.; Rouvière, J. L.; Feuillet, G.; Daudin, B.

In: Physica Status Solidi (B) Basic Research, Vol. 234, No. 3, 01.12.2002, p. 939-942.

Research output: Contribution to journalArticle

Brault, J. ; Tanaka, S. ; Sarigiannidou, E. ; Nakagawa, H. ; Rouvière, J. L. ; Feuillet, G. ; Daudin, B. / Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces. In: Physica Status Solidi (B) Basic Research. 2002 ; Vol. 234, No. 3. pp. 939-942.
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