Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

J. Brault; S. Tanaka; E. Sarigiannidou; H. Nakagawa; J. L. Rouvière; G. Feuillet; B. Daudin

doi:10.1002/1521-3951(200212)234:3<939::AID-PSSB939>3.0.CO;2-L

Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

J. Brault, S. Tanaka, E. Sarigiannidou, H. Nakagawa, J. L. Rouvière, G. Feuillet, B. Daudin

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.

Original language	English
Pages (from-to)	939-942
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	234
Issue number	3
DOIs	https://doi.org/10.1002/1521-3951(200212)234:3<939::AID-PSSB939>3.0.CO;2-L
Publication status	Published - Dec 1 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(200212)234:3<939::AID-PSSB939>3.0.CO;2-L

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@article{dfea4392428342cab49314a58da9eb6d,

title = "Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces",

abstract = "The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.",

author = "J. Brault and S. Tanaka and E. Sarigiannidou and H. Nakagawa and Rouvi{\`e}re, {J. L.} and G. Feuillet and B. Daudin",

year = "2002",

month = dec,

day = "1",

doi = "10.1002/1521-3951(200212)234:3<939::AID-PSSB939>3.0.CO;2-L",

language = "English",

volume = "234",

pages = "939--942",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "3",

}

TY - JOUR

T1 - Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

AU - Brault, J.

AU - Tanaka, S.

AU - Sarigiannidou, E.

AU - Nakagawa, H.

AU - Rouvière, J. L.

AU - Feuillet, G.

AU - Daudin, B.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.

AB - The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0036930132&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036930132&partnerID=8YFLogxK

U2 - 10.1002/1521-3951(200212)234:3<939::AID-PSSB939>3.0.CO;2-L

DO - 10.1002/1521-3951(200212)234:3<939::AID-PSSB939>3.0.CO;2-L

M3 - Article

AN - SCOPUS:0036930132

VL - 234

SP - 939

EP - 942

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 3

ER -

Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

Abstract

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