Abstract
The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated.
Original language | English |
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Pages (from-to) | 939-942 |
Number of pages | 4 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 234 |
Issue number | 3 |
DOIs | |
Publication status | Published - Dec 1 2002 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics