Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization

Masashi Kurosawa, Naoyuki Kawabata, Ryusuke Kato, Taizoh Sadoh, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate metal-induced lateral crystallization (MILC) of Si on insulator to achieve (101) oriented Si films. Moreover, we demonstrate the lateral liquid phase epitaxy of high quality Ge(101) layers by using the MILC-Si films as crystal seed. This technique will be employed to realize high-speed thin-film transistors with Ge channel.

Original languageEnglish
Title of host publicationAdvanced Semiconductor-on-Insulator Technology and Related Physics 15
Pages51-54
Number of pages4
Edition5
DOIs
Publication statusPublished - Aug 2 2011
Event15th International Symposium on Advanced Semiconductor-on-Insulator Technology and Related Physics - 219th ECS Meeting - Montreal, QC, Canada
Duration: May 1 2011May 6 2011

Publication series

NameECS Transactions
Number5
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other15th International Symposium on Advanced Semiconductor-on-Insulator Technology and Related Physics - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period5/1/115/6/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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