Lateral organic light-emitting diode with field-effect transistor characteristics

Takahito Oyamada, Hiroyuki Uchiuzou, Seiji Akiyama, Yoshiaki Oku, Noriyuki Shimoji, Kazumi Matsushige, Hiroyuki Sasabe, Chihaya Adachi

Research output: Contribution to journalArticle

109 Citations (Scopus)

Abstract

We succeeded in observing bright electroluminescence (EL) from 1 wt % -rubrene doped tetraphenylpyrene (TPPy) as an active layer in a lateral organic light-emitting diode structure that allowed field-effect transistor operation. This device configuration provides an organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control the EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, not only rubrene doping into the TPPy host but also adjusting the source-drain channel length significantly improved the EL characteristics. We observed a maximum EL quantum efficiency (ηext) of ∼0.5% with a CrAu source (S) -drain (D) electrode and a slightly higher ηext of ∼0.8% with S-D electrodes of MgAuAu, AlAu, CrYAuAu, and MgAlAu multilayers, aiming for simultaneous hole and electron injection.

Original languageEnglish
Article number074506
JournalJournal of Applied Physics
Volume98
Issue number7
DOIs
Publication statusPublished - Oct 1 2005

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electroluminescence
light emitting diodes
field effect transistors
electrodes
quantum efficiency
anodes
transistors
cathodes
adjusting
injection
configurations
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Oyamada, T., Uchiuzou, H., Akiyama, S., Oku, Y., Shimoji, N., Matsushige, K., ... Adachi, C. (2005). Lateral organic light-emitting diode with field-effect transistor characteristics. Journal of Applied Physics, 98(7), [074506]. https://doi.org/10.1063/1.2060932

Lateral organic light-emitting diode with field-effect transistor characteristics. / Oyamada, Takahito; Uchiuzou, Hiroyuki; Akiyama, Seiji; Oku, Yoshiaki; Shimoji, Noriyuki; Matsushige, Kazumi; Sasabe, Hiroyuki; Adachi, Chihaya.

In: Journal of Applied Physics, Vol. 98, No. 7, 074506, 01.10.2005.

Research output: Contribution to journalArticle

Oyamada, T, Uchiuzou, H, Akiyama, S, Oku, Y, Shimoji, N, Matsushige, K, Sasabe, H & Adachi, C 2005, 'Lateral organic light-emitting diode with field-effect transistor characteristics', Journal of Applied Physics, vol. 98, no. 7, 074506. https://doi.org/10.1063/1.2060932
Oyamada T, Uchiuzou H, Akiyama S, Oku Y, Shimoji N, Matsushige K et al. Lateral organic light-emitting diode with field-effect transistor characteristics. Journal of Applied Physics. 2005 Oct 1;98(7). 074506. https://doi.org/10.1063/1.2060932
Oyamada, Takahito ; Uchiuzou, Hiroyuki ; Akiyama, Seiji ; Oku, Yoshiaki ; Shimoji, Noriyuki ; Matsushige, Kazumi ; Sasabe, Hiroyuki ; Adachi, Chihaya. / Lateral organic light-emitting diode with field-effect transistor characteristics. In: Journal of Applied Physics. 2005 ; Vol. 98, No. 7.
@article{17e63cb876ba4c4f99d7f100cdd1bba9,
title = "Lateral organic light-emitting diode with field-effect transistor characteristics",
abstract = "We succeeded in observing bright electroluminescence (EL) from 1 wt {\%} -rubrene doped tetraphenylpyrene (TPPy) as an active layer in a lateral organic light-emitting diode structure that allowed field-effect transistor operation. This device configuration provides an organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control the EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, not only rubrene doping into the TPPy host but also adjusting the source-drain channel length significantly improved the EL characteristics. We observed a maximum EL quantum efficiency (ηext) of ∼0.5{\%} with a CrAu source (S) -drain (D) electrode and a slightly higher ηext of ∼0.8{\%} with S-D electrodes of MgAuAu, AlAu, CrYAuAu, and MgAlAu multilayers, aiming for simultaneous hole and electron injection.",
author = "Takahito Oyamada and Hiroyuki Uchiuzou and Seiji Akiyama and Yoshiaki Oku and Noriyuki Shimoji and Kazumi Matsushige and Hiroyuki Sasabe and Chihaya Adachi",
year = "2005",
month = "10",
day = "1",
doi = "10.1063/1.2060932",
language = "English",
volume = "98",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Lateral organic light-emitting diode with field-effect transistor characteristics

AU - Oyamada, Takahito

AU - Uchiuzou, Hiroyuki

AU - Akiyama, Seiji

AU - Oku, Yoshiaki

AU - Shimoji, Noriyuki

AU - Matsushige, Kazumi

AU - Sasabe, Hiroyuki

AU - Adachi, Chihaya

PY - 2005/10/1

Y1 - 2005/10/1

N2 - We succeeded in observing bright electroluminescence (EL) from 1 wt % -rubrene doped tetraphenylpyrene (TPPy) as an active layer in a lateral organic light-emitting diode structure that allowed field-effect transistor operation. This device configuration provides an organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control the EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, not only rubrene doping into the TPPy host but also adjusting the source-drain channel length significantly improved the EL characteristics. We observed a maximum EL quantum efficiency (ηext) of ∼0.5% with a CrAu source (S) -drain (D) electrode and a slightly higher ηext of ∼0.8% with S-D electrodes of MgAuAu, AlAu, CrYAuAu, and MgAlAu multilayers, aiming for simultaneous hole and electron injection.

AB - We succeeded in observing bright electroluminescence (EL) from 1 wt % -rubrene doped tetraphenylpyrene (TPPy) as an active layer in a lateral organic light-emitting diode structure that allowed field-effect transistor operation. This device configuration provides an organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control the EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, not only rubrene doping into the TPPy host but also adjusting the source-drain channel length significantly improved the EL characteristics. We observed a maximum EL quantum efficiency (ηext) of ∼0.5% with a CrAu source (S) -drain (D) electrode and a slightly higher ηext of ∼0.8% with S-D electrodes of MgAuAu, AlAu, CrYAuAu, and MgAlAu multilayers, aiming for simultaneous hole and electron injection.

UR - http://www.scopus.com/inward/record.url?scp=27144472205&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27144472205&partnerID=8YFLogxK

U2 - 10.1063/1.2060932

DO - 10.1063/1.2060932

M3 - Article

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 074506

ER -