Lateral organic light-emitting diode with field-effect transistor characteristics

Takahito Oyamada, Hiroyuki Uchiuzou, Seiji Akiyama, Yoshiaki Oku, Noriyuki Shimoji, Kazumi Matsushige, Hiroyuki Sasabe, Chihaya Adachi

Research output: Contribution to journalArticlepeer-review

111 Citations (Scopus)

Abstract

We succeeded in observing bright electroluminescence (EL) from 1 wt % -rubrene doped tetraphenylpyrene (TPPy) as an active layer in a lateral organic light-emitting diode structure that allowed field-effect transistor operation. This device configuration provides an organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control the EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, not only rubrene doping into the TPPy host but also adjusting the source-drain channel length significantly improved the EL characteristics. We observed a maximum EL quantum efficiency (ηext) of ∼0.5% with a CrAu source (S) -drain (D) electrode and a slightly higher ηext of ∼0.8% with S-D electrodes of MgAuAu, AlAu, CrYAuAu, and MgAlAu multilayers, aiming for simultaneous hole and electron injection.

Original languageEnglish
Article number074506
JournalJournal of Applied Physics
Volume98
Issue number7
DOIs
Publication statusPublished - Oct 1 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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