Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

Masatoshi Kawakita; Kyota Okabe; Takashi Kimura

doi:10.1063/1.4939683

Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

Masatoshi Kawakita, Kyota Okabe, Takashi Kimura

Condensed Matter Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO_x bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO_x system similarly in the vertical device based on GdO_x. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO_x device. The superior performance of the CoFeB/GdO_x device implies the importance of the spin on the resistive switching.

Original language	English
Article number	023101
Journal	Applied Physics Letters
Volume	108
Issue number	2
DOIs	https://doi.org/10.1063/1.4939683
Publication status	Published - Jan 11 2016

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4939683

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title = "Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide",

abstract = "We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdOx bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdOx system similarly in the vertical device based on GdOx. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdOx device. The superior performance of the CoFeB/GdOx device implies the importance of the spin on the resistive switching.",

author = "Masatoshi Kawakita and Kyota Okabe and Takashi Kimura",

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Y1 - 2016/1/11

N2 - We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdOx bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdOx system similarly in the vertical device based on GdOx. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdOx device. The superior performance of the CoFeB/GdOx device implies the importance of the spin on the resistive switching.

AB - We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdOx bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdOx system similarly in the vertical device based on GdOx. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdOx device. The superior performance of the CoFeB/GdOx device implies the importance of the spin on the resistive switching.

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Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

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