Laterally-graded doping into ge-on-insulator by combination of ion-implantation and rapid-melting growth

Ryo Matsumura; Mohammad Anisuzzaman; Hiroyuki Yokoyama; Taizoh Sadoh; Masanobu Miyao

doi:10.1149/2.002307ssl

Laterally-graded doping into ge-on-insulator by combination of ion-implantation and rapid-melting growth

Ryo Matsumura, Mohammad Anisuzzaman, Hiroyuki Yokoyama, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ge-on-insulator (GOI) having laterally-graded doping-profiles is essential to formation of functional-devices such as high-efficiency thermo-electric devices. To achieve this, rapid-melting growth of a-Ge strips implanted with P ions is investigated under a dose range of 1 × 10¹²-2 × 10¹⁵ cm-2. For dose over 1 × 1014 cm-2, grown-Ge layers show n-type conduction. Moreover, for dose of 2 × 10¹⁵ cm-2, a laterally-graded doping-profile (∼8 × 1015 cm^-3/μm) is achieved in the grown region (growth-distance: 0-300 μm) by P segregation during the melt-back process. The graded doping-profile generates electric-fields of -0.6 V/cm, which can be increased by decreasing strip-length. This technique is expected to facilitate integration of functional-devices on Si-platform.

Original language	English
Pages (from-to)	P58-P60
Journal	ECS Solid State Letters
Volume	2
Issue number	7
DOIs	https://doi.org/10.1149/2.002307ssl
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "Ge-on-insulator (GOI) having laterally-graded doping-profiles is essential to formation of functional-devices such as high-efficiency thermo-electric devices. To achieve this, rapid-melting growth of a-Ge strips implanted with P ions is investigated under a dose range of 1 × 1012-2 × 1015 cm-2. For dose over 1 × 1014 cm-2, grown-Ge layers show n-type conduction. Moreover, for dose of 2 × 1015 cm-2, a laterally-graded doping-profile (∼8 × 1015 cm-3/μm) is achieved in the grown region (growth-distance: 0-300 μm) by P segregation during the melt-back process. The graded doping-profile generates electric-fields of -0.6 V/cm, which can be increased by decreasing strip-length. This technique is expected to facilitate integration of functional-devices on Si-platform.",

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T1 - Laterally-graded doping into ge-on-insulator by combination of ion-implantation and rapid-melting growth

AU - Matsumura, Ryo

AU - Anisuzzaman, Mohammad

AU - Yokoyama, Hiroyuki

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2013

Y1 - 2013

N2 - Ge-on-insulator (GOI) having laterally-graded doping-profiles is essential to formation of functional-devices such as high-efficiency thermo-electric devices. To achieve this, rapid-melting growth of a-Ge strips implanted with P ions is investigated under a dose range of 1 × 1012-2 × 1015 cm-2. For dose over 1 × 1014 cm-2, grown-Ge layers show n-type conduction. Moreover, for dose of 2 × 1015 cm-2, a laterally-graded doping-profile (∼8 × 1015 cm-3/μm) is achieved in the grown region (growth-distance: 0-300 μm) by P segregation during the melt-back process. The graded doping-profile generates electric-fields of -0.6 V/cm, which can be increased by decreasing strip-length. This technique is expected to facilitate integration of functional-devices on Si-platform.

AB - Ge-on-insulator (GOI) having laterally-graded doping-profiles is essential to formation of functional-devices such as high-efficiency thermo-electric devices. To achieve this, rapid-melting growth of a-Ge strips implanted with P ions is investigated under a dose range of 1 × 1012-2 × 1015 cm-2. For dose over 1 × 1014 cm-2, grown-Ge layers show n-type conduction. Moreover, for dose of 2 × 1015 cm-2, a laterally-graded doping-profile (∼8 × 1015 cm-3/μm) is achieved in the grown region (growth-distance: 0-300 μm) by P segregation during the melt-back process. The graded doping-profile generates electric-fields of -0.6 V/cm, which can be increased by decreasing strip-length. This technique is expected to facilitate integration of functional-devices on Si-platform.

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Laterally-graded doping into ge-on-insulator by combination of ion-implantation and rapid-melting growth

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