Leakage current spectroscopy of epitaxial ferroelectric/semiconductor heterostructures and their memory effect

Y. Watanabe, D. Sawamura, M. Okano, N. Toyama

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The current through 3-dimensionally-aligned epitaxial BaTiO3/perovskite-semiconductor heterostructures was measured down to fA by changing applied voltage and the ambient temperature. At low applied voltage, the leakage current through the BaTiO3/hole-conduction-type semiconductor was relaxation-dominated and symmetric with regard to bias polarity, while it exhibited an ohmic conduction in BaTiO3/electron-conduction-type semiconductor. The current exhibited reproducible memory effect at a high forward bias which was sufficiently low to preserve insulating property. Similar current-voltage characteristics were found using a nano-scale electrode. By regarding the BaTiO3 as a semiconductor, the transient process of the band bending at BaTiO3 surface explains the above observations.

Original languageEnglish
Pages (from-to)682-688
Number of pages7
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - Jan 1 1998
Externally publishedYes
EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
Duration: Oct 27 1997Oct 30 1997

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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