TY - JOUR
T1 - Leakage current spectroscopy of epitaxial ferroelectric/semiconductor heterostructures and their memory effect
AU - Watanabe, Y.
AU - Sawamura, D.
AU - Okano, M.
AU - Toyama, N.
N1 - Funding Information:
The authors acknowledge T. Shigesue and I. Sunohara for the help of electrode deposition. This work is performed through the support of Grant-in-aid for Scientific Research from the Ministry of Education, Science and Sports and the partial support from the Ogasawara Foundation.
PY - 1998
Y1 - 1998
N2 - The current through 3-dimensionally-aligned epitaxial BaTiO3/perovskite-semiconductor heterostructures was measured down to fA by changing applied voltage and the ambient temperature. At low applied voltage, the leakage current through the BaTiO3/hole-conduction-type semiconductor was relaxation-dominated and symmetric with regard to bias polarity, while it exhibited an ohmic conduction in BaTiO3/electron-conduction-type semiconductor. The current exhibited reproducible memory effect at a high forward bias which was sufficiently low to preserve insulating property. Similar current-voltage characteristics were found using a nano-scale electrode. By regarding the BaTiO3 as a semiconductor, the transient process of the band bending at BaTiO3 surface explains the above observations.
AB - The current through 3-dimensionally-aligned epitaxial BaTiO3/perovskite-semiconductor heterostructures was measured down to fA by changing applied voltage and the ambient temperature. At low applied voltage, the leakage current through the BaTiO3/hole-conduction-type semiconductor was relaxation-dominated and symmetric with regard to bias polarity, while it exhibited an ohmic conduction in BaTiO3/electron-conduction-type semiconductor. The current exhibited reproducible memory effect at a high forward bias which was sufficiently low to preserve insulating property. Similar current-voltage characteristics were found using a nano-scale electrode. By regarding the BaTiO3 as a semiconductor, the transient process of the band bending at BaTiO3 surface explains the above observations.
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U2 - 10.1016/S0169-4332(98)00138-X
DO - 10.1016/S0169-4332(98)00138-X
M3 - Conference article
AN - SCOPUS:17444449907
SN - 0169-4332
VL - 130-132
SP - 682
EP - 688
JO - Applied Surface Science
JF - Applied Surface Science
T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4
Y2 - 27 October 1997 through 30 October 1997
ER -