TY - JOUR
T1 - Lifetimes of photogenerated electrons on a GaAs surface affected by nanostructural defects
AU - Fukumoto, Keiki
AU - Yamada, Yuki
AU - Koshihara, Shin Ya
AU - Onda, Ken
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/10/1
Y1 - 2015/10/1
N2 - The recombination dynamics of photogenerated carriers on temporal and spatial scales of 100 fs and 100 nm, respectively, on an inhomogeneous GaAs surface with structural defects was investigated using time-resolved photoemission electron microscopy with femtosecond laser pulses. The observed photocarrier lifetimes (τ) ranged from subpicoseconds to picoseconds at isolated structural defects and were inversely proportional to the photoemission intensity at each defect. We concluded that τ corresponds to the carrier trapping time to midgap defect states and estimated the density of the midgap states at each defect on the basis of the relation between τ and the photoemission intensity.
AB - The recombination dynamics of photogenerated carriers on temporal and spatial scales of 100 fs and 100 nm, respectively, on an inhomogeneous GaAs surface with structural defects was investigated using time-resolved photoemission electron microscopy with femtosecond laser pulses. The observed photocarrier lifetimes (τ) ranged from subpicoseconds to picoseconds at isolated structural defects and were inversely proportional to the photoemission intensity at each defect. We concluded that τ corresponds to the carrier trapping time to midgap defect states and estimated the density of the midgap states at each defect on the basis of the relation between τ and the photoemission intensity.
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U2 - 10.7567/APEX.8.101201
DO - 10.7567/APEX.8.101201
M3 - Article
AN - SCOPUS:84943339175
SN - 1882-0778
VL - 8
JO - Applied Physics Express
JF - Applied Physics Express
IS - 10
M1 - 101201
ER -