Lifetimes of photogenerated electrons on a GaAs surface affected by nanostructural defects

Keiki Fukumoto, Yuki Yamada, Shin Ya Koshihara, Ken Onda

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

The recombination dynamics of photogenerated carriers on temporal and spatial scales of 100 fs and 100 nm, respectively, on an inhomogeneous GaAs surface with structural defects was investigated using time-resolved photoemission electron microscopy with femtosecond laser pulses. The observed photocarrier lifetimes (τ) ranged from subpicoseconds to picoseconds at isolated structural defects and were inversely proportional to the photoemission intensity at each defect. We concluded that τ corresponds to the carrier trapping time to midgap defect states and estimated the density of the midgap states at each defect on the basis of the relation between τ and the photoemission intensity.

Original languageEnglish
Article number101201
JournalApplied Physics Express
Volume8
Issue number10
DOIs
Publication statusPublished - Oct 1 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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