Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

J. Brault, Tanaka Satoru, E. Sarigiannidou, J. L. Rouvière, B. Daudin, G. Feuillet, H. Nakagawa

Research output: Contribution to journal › Article

22 Citations (Scopus)

Abstract

The linear alignment of self-assembled GaN quantum dots (QD) grown by molecular beam epitaxy on AlN using vicinal SiC substrates was demonstrated. It was shown that stepped AlN layers can be grown on such SiC substrates depending on growth parameters. The possibility of controlling the island spatial distribution was also demonstrated using atomic force microscopy.

Original languageEnglish
Pages (from-to)3108-3110
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number5
DOIs
Publication statusPublished - Mar 1 2003
Externally publishedYes

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alignment
quantum dots
spatial distribution
molecular beam epitaxy
atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Brault, J., Satoru, T., Sarigiannidou, E., Rouvière, J. L., Daudin, B., Feuillet, G., & Nakagawa, H. (2003). Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. Journal of Applied Physics, 93(5), 3108-3110. https://doi.org/10.1063/1.1538334

Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. / Brault, J.; Satoru, Tanaka; Sarigiannidou, E.; Rouvière, J. L.; Daudin, B.; Feuillet, G.; Nakagawa, H.

In: Journal of Applied Physics, Vol. 93, No. 5, 01.03.2003, p. 3108-3110.

Research output: Contribution to journal › Article

Brault, J, Satoru, T, Sarigiannidou, E, Rouvière, JL, Daudin, B, Feuillet, G & Nakagawa, H 2003, 'Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates', Journal of Applied Physics, vol. 93, no. 5, pp. 3108-3110. https://doi.org/10.1063/1.1538334
Brault J, Satoru T, Sarigiannidou E, Rouvière JL, Daudin B, Feuillet G et al. Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. Journal of Applied Physics. 2003 Mar 1;93(5):3108-3110. https://doi.org/10.1063/1.1538334
Brault, J. ; Satoru, Tanaka ; Sarigiannidou, E. ; Rouvière, J. L. ; Daudin, B. ; Feuillet, G. ; Nakagawa, H. / Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 5. pp. 3108-3110.
@article{c3ffd701cc574074838e75aa4c7628c9,
title = "Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates",
abstract = "The linear alignment of self-assembled GaN quantum dots (QD) grown by molecular beam epitaxy on AlN using vicinal SiC substrates was demonstrated. It was shown that stepped AlN layers can be grown on such SiC substrates depending on growth parameters. The possibility of controlling the island spatial distribution was also demonstrated using atomic force microscopy.",
author = "J. Brault and Tanaka Satoru and E. Sarigiannidou and Rouvi{\`e}re, {J. L.} and B. Daudin and G. Feuillet and H. Nakagawa",
year = "2003",
month = "3",
day = "1",
doi = "10.1063/1.1538334",
language = "English",
volume = "93",
pages = "3108--3110",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

AU - Brault, J.

AU - Satoru, Tanaka

AU - Sarigiannidou, E.

AU - Rouvière, J. L.

AU - Daudin, B.

AU - Feuillet, G.

AU - Nakagawa, H.

PY - 2003/3/1

Y1 - 2003/3/1

N2 - The linear alignment of self-assembled GaN quantum dots (QD) grown by molecular beam epitaxy on AlN using vicinal SiC substrates was demonstrated. It was shown that stepped AlN layers can be grown on such SiC substrates depending on growth parameters. The possibility of controlling the island spatial distribution was also demonstrated using atomic force microscopy.

AB - The linear alignment of self-assembled GaN quantum dots (QD) grown by molecular beam epitaxy on AlN using vicinal SiC substrates was demonstrated. It was shown that stepped AlN layers can be grown on such SiC substrates depending on growth parameters. The possibility of controlling the island spatial distribution was also demonstrated using atomic force microscopy.

UR - http://www.scopus.com/inward/record.url?scp=0037349860&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037349860&partnerID=8YFLogxK

U2 - 10.1063/1.1538334

DO - 10.1063/1.1538334

M3 - Article

AN - SCOPUS:0037349860

VL - 93

SP - 3108

EP - 3110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -

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