Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

J. Brault, S. Tanaka, E. Sarigiannidou, J. L. Rouvière, B. Daudin, G. Feuillet, H. Nakagawa

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Abstract

The linear alignment of self-assembled GaN quantum dots (QD) grown by molecular beam epitaxy on AlN using vicinal SiC substrates was demonstrated. It was shown that stepped AlN layers can be grown on such SiC substrates depending on growth parameters. The possibility of controlling the island spatial distribution was also demonstrated using atomic force microscopy.

Original languageEnglish
Pages (from-to)3108-3110
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number5
DOIs
Publication statusPublished - Mar 1 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Brault, J., Tanaka, S., Sarigiannidou, E., Rouvière, J. L., Daudin, B., Feuillet, G., & Nakagawa, H. (2003). Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. Journal of Applied Physics, 93(5), 3108-3110. https://doi.org/10.1063/1.1538334