Abstract
The linear alignment of self-assembled GaN quantum dots (QD) grown by molecular beam epitaxy on AlN using vicinal SiC substrates was demonstrated. It was shown that stepped AlN layers can be grown on such SiC substrates depending on growth parameters. The possibility of controlling the island spatial distribution was also demonstrated using atomic force microscopy.
Original language | English |
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Pages (from-to) | 3108-3110 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 5 |
DOIs | |
Publication status | Published - Mar 1 2003 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)