Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

J. Brault; S. Tanaka; E. Sarigiannidou; J. L. Rouvière; B. Daudin; G. Feuillet; H. Nakagawa

doi:10.1063/1.1538334

Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

J. Brault, S. Tanaka, E. Sarigiannidou, J. L. Rouvière, B. Daudin, G. Feuillet, H. Nakagawa

Research output: Contribution to journal › Article

22 Citations (Scopus)

Abstract

The linear alignment of self-assembled GaN quantum dots (QD) grown by molecular beam epitaxy on AlN using vicinal SiC substrates was demonstrated. It was shown that stepped AlN layers can be grown on such SiC substrates depending on growth parameters. The possibility of controlling the island spatial distribution was also demonstrated using atomic force microscopy.

Original language	English
Pages (from-to)	3108-3110
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.1538334
Publication status	Published - Mar 1 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1538334

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Brault, J., Tanaka, S., Sarigiannidou, E., Rouvière, J. L., Daudin, B., Feuillet, G., & Nakagawa, H. (2003). Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. Journal of Applied Physics, 93(5), 3108-3110. https://doi.org/10.1063/1.1538334

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AU - Daudin, B.

AU - Feuillet, G.

AU - Nakagawa, H.

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