Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

J. Brault, Tanaka Satoru, E. Sarigiannidou, J. L. Rouvière, B. Daudin, G. Feuillet, H. Nakagawa

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The linear alignment of self-assembled GaN quantum dots (QD) grown by molecular beam epitaxy on AlN using vicinal SiC substrates was demonstrated. It was shown that stepped AlN layers can be grown on such SiC substrates depending on growth parameters. The possibility of controlling the island spatial distribution was also demonstrated using atomic force microscopy.

Original languageEnglish
Pages (from-to)3108-3110
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number5
DOIs
Publication statusPublished - Mar 1 2003
Externally publishedYes

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alignment
quantum dots
spatial distribution
molecular beam epitaxy
atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Brault, J., Satoru, T., Sarigiannidou, E., Rouvière, J. L., Daudin, B., Feuillet, G., & Nakagawa, H. (2003). Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. Journal of Applied Physics, 93(5), 3108-3110. https://doi.org/10.1063/1.1538334

Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. / Brault, J.; Satoru, Tanaka; Sarigiannidou, E.; Rouvière, J. L.; Daudin, B.; Feuillet, G.; Nakagawa, H.

In: Journal of Applied Physics, Vol. 93, No. 5, 01.03.2003, p. 3108-3110.

Research output: Contribution to journalArticle

Brault, J, Satoru, T, Sarigiannidou, E, Rouvière, JL, Daudin, B, Feuillet, G & Nakagawa, H 2003, 'Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates', Journal of Applied Physics, vol. 93, no. 5, pp. 3108-3110. https://doi.org/10.1063/1.1538334
Brault J, Satoru T, Sarigiannidou E, Rouvière JL, Daudin B, Feuillet G et al. Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. Journal of Applied Physics. 2003 Mar 1;93(5):3108-3110. https://doi.org/10.1063/1.1538334
Brault, J. ; Satoru, Tanaka ; Sarigiannidou, E. ; Rouvière, J. L. ; Daudin, B. ; Feuillet, G. ; Nakagawa, H. / Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 5. pp. 3108-3110.
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