Liquid injection ALD of Pb (Zr,Ti) Ox thin films by a combination of self-regulating component oxide processes

Takayuki Watanabe, Susanne Hoffmann-Eifert, Frank Peter, Shaobo Mi, Chunlin Jia, Cheol Seong Hwang, Rainer Waser

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Quaternary Pb (Zr,Ti) Ox [PZT] films were deposited at 240°C by a combination of liquid injection atomic layer depositions (ALD) of binary PbO, Ti Ox, and Zr Ox thin films. We used water as the oxidant and two sets of precursors: Pb (C11 H19 O2) 2 [Pb (DPM)2], Zr (C11 H19 O2) 4 [Zr (DPM)4], and either Ti (O C3 H7) 2 (C11 H19 O2) 2 [Ti (Oi-Pr)2 (DPM)2] or (TiO C3 H7) 4 [Ti (Oi-Pr)4]. These precursors were dissolved in ethylcyclohexane and separately injected into a vaporizer. The deposition rates of the metal elements were investigated as a function of the input of the solutions. We started the ALD-PZT process with Ti (Oi-Pr)2 (DPM)2. When the input of one solution was increased, the deposition rates of the metal elements continued to increase or fluctuate, showing a complex interdependence. A PZT film deposited on a three-dimensional (3D) structure had an inhomogeneous cation composition. The film uniformity on the 3D structure was significantly improved by substituting Ti (Oi-Pr)2 (DPM)2 with Ti (Oi-Pr)4. In this ALD-PZT process, self-regulated growths were confirmed for Pb and Zr. Although the deposition rate of Ti did not saturate due to a catalytic decomposition, this study suggests that the multilayer stacking ALD process is an effective method for building up homogeneous layers of multicomponent materials on desired 3D structures.

Original languageEnglish
Pages (from-to)G262-G269
JournalJournal of the Electrochemical Society
Volume154
Issue number12
DOIs
Publication statusPublished - Nov 1 2007
Externally publishedYes

Fingerprint

liquid injection
automatic control
Atomic layer deposition
atomic layer epitaxy
Oxides
Deposition rates
Thin films
oxides
Liquids
thin films
Chemical elements
vaporizers
Metals
Oxidants
metals
Cations
Multilayers
Positive ions
Decomposition
decomposition

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Liquid injection ALD of Pb (Zr,Ti) Ox thin films by a combination of self-regulating component oxide processes. / Watanabe, Takayuki; Hoffmann-Eifert, Susanne; Peter, Frank; Mi, Shaobo; Jia, Chunlin; Hwang, Cheol Seong; Waser, Rainer.

In: Journal of the Electrochemical Society, Vol. 154, No. 12, 01.11.2007, p. G262-G269.

Research output: Contribution to journalArticle

Watanabe, Takayuki ; Hoffmann-Eifert, Susanne ; Peter, Frank ; Mi, Shaobo ; Jia, Chunlin ; Hwang, Cheol Seong ; Waser, Rainer. / Liquid injection ALD of Pb (Zr,Ti) Ox thin films by a combination of self-regulating component oxide processes. In: Journal of the Electrochemical Society. 2007 ; Vol. 154, No. 12. pp. G262-G269.
@article{968a2be5d4db4da292aecc9ad477ce64,
title = "Liquid injection ALD of Pb (Zr,Ti) Ox thin films by a combination of self-regulating component oxide processes",
abstract = "Quaternary Pb (Zr,Ti) Ox [PZT] films were deposited at 240°C by a combination of liquid injection atomic layer depositions (ALD) of binary PbO, Ti Ox, and Zr Ox thin films. We used water as the oxidant and two sets of precursors: Pb (C11 H19 O2) 2 [Pb (DPM)2], Zr (C11 H19 O2) 4 [Zr (DPM)4], and either Ti (O C3 H7) 2 (C11 H19 O2) 2 [Ti (Oi-Pr)2 (DPM)2] or (TiO C3 H7) 4 [Ti (Oi-Pr)4]. These precursors were dissolved in ethylcyclohexane and separately injected into a vaporizer. The deposition rates of the metal elements were investigated as a function of the input of the solutions. We started the ALD-PZT process with Ti (Oi-Pr)2 (DPM)2. When the input of one solution was increased, the deposition rates of the metal elements continued to increase or fluctuate, showing a complex interdependence. A PZT film deposited on a three-dimensional (3D) structure had an inhomogeneous cation composition. The film uniformity on the 3D structure was significantly improved by substituting Ti (Oi-Pr)2 (DPM)2 with Ti (Oi-Pr)4. In this ALD-PZT process, self-regulated growths were confirmed for Pb and Zr. Although the deposition rate of Ti did not saturate due to a catalytic decomposition, this study suggests that the multilayer stacking ALD process is an effective method for building up homogeneous layers of multicomponent materials on desired 3D structures.",
author = "Takayuki Watanabe and Susanne Hoffmann-Eifert and Frank Peter and Shaobo Mi and Chunlin Jia and Hwang, {Cheol Seong} and Rainer Waser",
year = "2007",
month = "11",
day = "1",
doi = "10.1149/1.2789295",
language = "English",
volume = "154",
pages = "G262--G269",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "12",

}

TY - JOUR

T1 - Liquid injection ALD of Pb (Zr,Ti) Ox thin films by a combination of self-regulating component oxide processes

AU - Watanabe, Takayuki

AU - Hoffmann-Eifert, Susanne

AU - Peter, Frank

AU - Mi, Shaobo

AU - Jia, Chunlin

AU - Hwang, Cheol Seong

AU - Waser, Rainer

PY - 2007/11/1

Y1 - 2007/11/1

N2 - Quaternary Pb (Zr,Ti) Ox [PZT] films were deposited at 240°C by a combination of liquid injection atomic layer depositions (ALD) of binary PbO, Ti Ox, and Zr Ox thin films. We used water as the oxidant and two sets of precursors: Pb (C11 H19 O2) 2 [Pb (DPM)2], Zr (C11 H19 O2) 4 [Zr (DPM)4], and either Ti (O C3 H7) 2 (C11 H19 O2) 2 [Ti (Oi-Pr)2 (DPM)2] or (TiO C3 H7) 4 [Ti (Oi-Pr)4]. These precursors were dissolved in ethylcyclohexane and separately injected into a vaporizer. The deposition rates of the metal elements were investigated as a function of the input of the solutions. We started the ALD-PZT process with Ti (Oi-Pr)2 (DPM)2. When the input of one solution was increased, the deposition rates of the metal elements continued to increase or fluctuate, showing a complex interdependence. A PZT film deposited on a three-dimensional (3D) structure had an inhomogeneous cation composition. The film uniformity on the 3D structure was significantly improved by substituting Ti (Oi-Pr)2 (DPM)2 with Ti (Oi-Pr)4. In this ALD-PZT process, self-regulated growths were confirmed for Pb and Zr. Although the deposition rate of Ti did not saturate due to a catalytic decomposition, this study suggests that the multilayer stacking ALD process is an effective method for building up homogeneous layers of multicomponent materials on desired 3D structures.

AB - Quaternary Pb (Zr,Ti) Ox [PZT] films were deposited at 240°C by a combination of liquid injection atomic layer depositions (ALD) of binary PbO, Ti Ox, and Zr Ox thin films. We used water as the oxidant and two sets of precursors: Pb (C11 H19 O2) 2 [Pb (DPM)2], Zr (C11 H19 O2) 4 [Zr (DPM)4], and either Ti (O C3 H7) 2 (C11 H19 O2) 2 [Ti (Oi-Pr)2 (DPM)2] or (TiO C3 H7) 4 [Ti (Oi-Pr)4]. These precursors were dissolved in ethylcyclohexane and separately injected into a vaporizer. The deposition rates of the metal elements were investigated as a function of the input of the solutions. We started the ALD-PZT process with Ti (Oi-Pr)2 (DPM)2. When the input of one solution was increased, the deposition rates of the metal elements continued to increase or fluctuate, showing a complex interdependence. A PZT film deposited on a three-dimensional (3D) structure had an inhomogeneous cation composition. The film uniformity on the 3D structure was significantly improved by substituting Ti (Oi-Pr)2 (DPM)2 with Ti (Oi-Pr)4. In this ALD-PZT process, self-regulated growths were confirmed for Pb and Zr. Although the deposition rate of Ti did not saturate due to a catalytic decomposition, this study suggests that the multilayer stacking ALD process is an effective method for building up homogeneous layers of multicomponent materials on desired 3D structures.

UR - http://www.scopus.com/inward/record.url?scp=35549000100&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35549000100&partnerID=8YFLogxK

U2 - 10.1149/1.2789295

DO - 10.1149/1.2789295

M3 - Article

AN - SCOPUS:35549000100

VL - 154

SP - G262-G269

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 12

ER -