Liquid injection atomic layer deposition of Pb(Zr,Ti)O3 thin films on three dimensional structures

Takayuki Watanabe, Susanne Hoffmann-Eifert, Rainer Waser, Cheol Seong Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A liquid injection atomic layer deposition (ALD) process has been developed for conformal deposition of lead zirconate titanate thin films on three dimensional structured silicon substrates. Future applications of these structures address the field of nonvolatile ferroelectric memory devices. PZT films were prepared by mixing the binary ALD processes of PbOx, TiOx, and ZrOx. It was found that the type of precursors as well as the stacking sequence of the binary oxide layers is crucial for the control of film stoichiometry and for a saturation of the film growth behaviour characteristic for ALD processes. Using an optimized ALD process the molar ratios of Pb/(Ti+Zr) as well as Zr/(Ti+Zr) in the films show a saturation behaviour against an increasing precursor injection volume. Pb(Zr xTi1-x)O3 films deposited on 3D structured silicon exhibited a uniform film thickness and a homogeneous cation composition over the complex structure.

Original languageEnglish
Title of host publication2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages156-158
Number of pages3
DOIs
Publication statusPublished - Dec 1 2007
Externally publishedYes
Event2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
Duration: May 27 2007May 31 2007

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics

Other

Other2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
CountryJapan
CityNara-city
Period5/27/075/31/07

Fingerprint

Atomic layer deposition
Thin films
Liquids
Silicon
Film growth
Stoichiometry
Oxides
Ferroelectric materials
Film thickness
Cations
Positive ions
Data storage equipment
Substrates
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Watanabe, T., Hoffmann-Eifert, S., Waser, R., & Hwang, C. S. (2007). Liquid injection atomic layer deposition of Pb(Zr,Ti)O3 thin films on three dimensional structures. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 156-158). [4393199] (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393199

Liquid injection atomic layer deposition of Pb(Zr,Ti)O3 thin films on three dimensional structures. / Watanabe, Takayuki; Hoffmann-Eifert, Susanne; Waser, Rainer; Hwang, Cheol Seong.

2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 156-158 4393199 (IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Watanabe, T, Hoffmann-Eifert, S, Waser, R & Hwang, CS 2007, Liquid injection atomic layer deposition of Pb(Zr,Ti)O3 thin films on three dimensional structures. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393199, IEEE International Symposium on Applications of Ferroelectrics, pp. 156-158, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 5/27/07. https://doi.org/10.1109/ISAF.2007.4393199
Watanabe T, Hoffmann-Eifert S, Waser R, Hwang CS. Liquid injection atomic layer deposition of Pb(Zr,Ti)O3 thin films on three dimensional structures. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 156-158. 4393199. (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393199
Watanabe, Takayuki ; Hoffmann-Eifert, Susanne ; Waser, Rainer ; Hwang, Cheol Seong. / Liquid injection atomic layer deposition of Pb(Zr,Ti)O3 thin films on three dimensional structures. 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. pp. 156-158 (IEEE International Symposium on Applications of Ferroelectrics).
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