Liquid injection atomic layer deposition of perovskite-type multi-component oxide thin films for ferroelectric and higher-k three dimensional capacitor structures

Susanne Hoffmann-Eifert, Takayuki Watanabe, Cheol Seong Hwang, Rainer Waser

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Quaternary Pb(Zr,Ti)Ox [PZT] films were deposited at 240°C by a combination of liquid injection atomic layer depositions (ALD) of binary PbO, TiOx, and ZrOx thin films. To find the optimum set of precursors different combinations of five precursors were tested: Pb(C 11H19O2)2 [Pb(DPM)2], Ti(OC3H7)2(C11H19O 2)2 [Ti(Oi-Pr)2(DPM)2] or Ti(OC 3H7)4 [Ti(Oi-Pr)4], and Zr(C 11H19O2)4 [Zr(DPM)4] or Zr(C9H15O2)4 [Zr(DIBM)4]. Each precursor was dissolved in ethylcyclohexane (ECH) and was separately injected into a vaporizer. Water vapor was used as oxidant. The deposition rates of the metal elements were investigated as a function of the input of the solutions. Using the set of 0.1M Pb(DPM)2, Ti(Oi-Pr)4, and Zr(DIBM)4 solutions resulted in PZT films with good uniformity on 3D structured substrates. The Zr to Ti ratio in the as-deposited PZT films could be adjusted in the range up to Zr/Ti =1. This study suggests that the multi-layer stacking liquid delivery ALD process is an effective method for building up homogeneous layers of multi-component materials on desired 3D structures.

Original languageEnglish
Title of host publication17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Volume2
DOIs
Publication statusPublished - Dec 1 2008
Externally publishedYes
Event17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States
Duration: Feb 23 2008Feb 28 2008

Other

Other17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
CountryUnited States
CitySanta Fe, NM
Period2/23/082/28/08

Fingerprint

Atomic layer deposition
Perovskite
Oxide films
Ferroelectric materials
Capacitors
Thin films
Liquids
Steam
Deposition rates
Oxidants
Chemical elements
Water vapor
Metals
Substrates
perovskite

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hoffmann-Eifert, S., Watanabe, T., Hwang, C. S., & Waser, R. (2008). Liquid injection atomic layer deposition of perovskite-type multi-component oxide thin films for ferroelectric and higher-k three dimensional capacitor structures. In 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 (Vol. 2). [4693849] https://doi.org/10.1109/ISAF.2008.4693849

Liquid injection atomic layer deposition of perovskite-type multi-component oxide thin films for ferroelectric and higher-k three dimensional capacitor structures. / Hoffmann-Eifert, Susanne; Watanabe, Takayuki; Hwang, Cheol Seong; Waser, Rainer.

17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. Vol. 2 2008. 4693849.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hoffmann-Eifert, S, Watanabe, T, Hwang, CS & Waser, R 2008, Liquid injection atomic layer deposition of perovskite-type multi-component oxide thin films for ferroelectric and higher-k three dimensional capacitor structures. in 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. vol. 2, 4693849, 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Fe, NM, United States, 2/23/08. https://doi.org/10.1109/ISAF.2008.4693849
Hoffmann-Eifert S, Watanabe T, Hwang CS, Waser R. Liquid injection atomic layer deposition of perovskite-type multi-component oxide thin films for ferroelectric and higher-k three dimensional capacitor structures. In 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. Vol. 2. 2008. 4693849 https://doi.org/10.1109/ISAF.2008.4693849
Hoffmann-Eifert, Susanne ; Watanabe, Takayuki ; Hwang, Cheol Seong ; Waser, Rainer. / Liquid injection atomic layer deposition of perovskite-type multi-component oxide thin films for ferroelectric and higher-k three dimensional capacitor structures. 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. Vol. 2 2008.
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abstract = "Quaternary Pb(Zr,Ti)Ox [PZT] films were deposited at 240°C by a combination of liquid injection atomic layer depositions (ALD) of binary PbO, TiOx, and ZrOx thin films. To find the optimum set of precursors different combinations of five precursors were tested: Pb(C 11H19O2)2 [Pb(DPM)2], Ti(OC3H7)2(C11H19O 2)2 [Ti(Oi-Pr)2(DPM)2] or Ti(OC 3H7)4 [Ti(Oi-Pr)4], and Zr(C 11H19O2)4 [Zr(DPM)4] or Zr(C9H15O2)4 [Zr(DIBM)4]. Each precursor was dissolved in ethylcyclohexane (ECH) and was separately injected into a vaporizer. Water vapor was used as oxidant. The deposition rates of the metal elements were investigated as a function of the input of the solutions. Using the set of 0.1M Pb(DPM)2, Ti(Oi-Pr)4, and Zr(DIBM)4 solutions resulted in PZT films with good uniformity on 3D structured substrates. The Zr to Ti ratio in the as-deposited PZT films could be adjusted in the range up to Zr/Ti =1. This study suggests that the multi-layer stacking liquid delivery ALD process is an effective method for building up homogeneous layers of multi-component materials on desired 3D structures.",
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