Liquid injection atomic layer deposition of Ti Ox films using Ti [OCH (C H3) 2] 4

Takayuki Watanabe, Susanne Hoffmann-Eifert, Lin Yang, Andreas Rüdiger, Carsten Kügeler, Cheol Seong Hwang, Rainer Waser

Research output: Contribution to journalArticle

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Abstract

Ti Ox films were prepared by liquid injection atomic layer deposition using titanium tetraisopropoxide (TTIP), Ti [OCH (C H3) 2] 4, dissolved in ethylcyclohexane (ECH). We analyzed the residual water content and the reaction with the TTIP for several solvents, choosing ECH for dissolving the TTIP because of the lowest residual water level and no ligand exchange reaction with the TTIP. Ti Ox films were deposited at 240°C with a wide range of the TTIP solution injections per cycle. However, an ideal self-regulated growth was not achieved for the Ti Ox films due to a slow catalytic decomposition of the TTIP molecules followed by the exchange reaction with the underling layer. The contribution of the catalytic decompositions to the deposition rates was suppressed by increasing the injection frequency of the TTIP solution into the vaporizer. A rather independent deposition rate of the input of the TTIP solution was achieved by increasing the injection frequency to 4 Hz, while Ti Ox films deposited with a low injection frequency of 0.25 Hz showed almost linear film growth rate to the input of the TTIP solution. The deposited Ti Ox films were amorphous and clearly showed both unipolar and bipolar resistive switching behaviors, which are applicable to nonvolatile memory applications.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume154
Issue number6
DOIs
Publication statusPublished - Aug 1 2007

Fingerprint

Atomic layer deposition
Titanium
Liquids
Deposition rates
Decomposition
titanium isopropoxide
Amorphous films
Film growth
Water levels
Water content
Ion exchange
Ligands
Data storage equipment
Molecules

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Liquid injection atomic layer deposition of Ti Ox films using Ti [OCH (C H3) 2] 4. / Watanabe, Takayuki; Hoffmann-Eifert, Susanne; Yang, Lin; Rüdiger, Andreas; Kügeler, Carsten; Hwang, Cheol Seong; Waser, Rainer.

In: Journal of the Electrochemical Society, Vol. 154, No. 6, 01.08.2007.

Research output: Contribution to journalArticle

Watanabe, Takayuki ; Hoffmann-Eifert, Susanne ; Yang, Lin ; Rüdiger, Andreas ; Kügeler, Carsten ; Hwang, Cheol Seong ; Waser, Rainer. / Liquid injection atomic layer deposition of Ti Ox films using Ti [OCH (C H3) 2] 4. In: Journal of the Electrochemical Society. 2007 ; Vol. 154, No. 6.
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