Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed

Kaoru Toko, Takashi Sakane, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

Abstract

Liquid-phase epitaxial growth (LPE) of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) crystal seeds (~ 1 μmφ{symbol}) is investigated. By optimizing cap and bottom SiO2 layer thickness, single-crystalline GOI (111) structures (~ 10 μmφ{symbol}) are realized. The Raman peaks due to Ge-Ge bonds of the growth regions reveal that the full width at half maximum (FWHM) is equal to that of single-crystalline Ge bulk wafers (3.2 cm- 1). This result demonstrates the very high crystal quality of the growth regions.

Original languageEnglish
JournalThin Solid Films
Volume518
Issue number6 SUPPL. 1
DOIs
Publication statusPublished - Jan 1 2010

Fingerprint

Liquid phase epitaxy
Seed
seeds
liquid phases
insulators
Crystalline materials
Crystals
Crystallization
Full width at half maximum
crystals
caps
wafers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed. / Toko, Kaoru; Sakane, Takashi; Tanaka, Takanori; Sadoh, Taizoh; Miyao, Masanobu.

In: Thin Solid Films, Vol. 518, No. 6 SUPPL. 1, 01.01.2010.

Research output: Contribution to journalArticle

Toko, Kaoru ; Sakane, Takashi ; Tanaka, Takanori ; Sadoh, Taizoh ; Miyao, Masanobu. / Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed. In: Thin Solid Films. 2010 ; Vol. 518, No. 6 SUPPL. 1.
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