Liquid phase epitaxy of GaN on MOCVD GaN/sapphire and HVPE free-standing substrates under high nitrogen pressure

M. Bockowski, P. Strak, P. Kempisty, I. Grzegory, B. Lucznik, S. Krukowski, S. Porowski

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Results of liquid phase epitaxy of GaN on MOCVD sapphire/GaN and HVPE free-standing GaN substrates by high pressure solution method are presented. The finite element calculation using experimentally measured temperatures is used for modeling the convective transport in the liquid gallium. The influence of a baffle and thermal conductivity of the various seeds for convection in liquid metal is analyzed in details.

Original languageEnglish
Pages (from-to)1539-1542
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - Dec 1 2008
Externally publishedYes
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: Sep 16 2007Sep 21 2007

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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