Liquid phase epitaxy of GaN on MOCVD GaN/sapphire and HVPE free-standing substrates under high nitrogen pressure

M. Bockowski; P. Strak; P. Kempisty; I. Grzegory; B. Lucznik; S. Krukowski; S. Porowski

doi:10.1002/pssc.200778462

Liquid phase epitaxy of GaN on MOCVD GaN/sapphire and HVPE free-standing substrates under high nitrogen pressure

M. Bockowski, P. Strak, P. Kempisty, I. Grzegory, B. Lucznik, S. Krukowski, S. Porowski

Research output: Contribution to journal › Conference article › peer-review

Abstract

Results of liquid phase epitaxy of GaN on MOCVD sapphire/GaN and HVPE free-standing GaN substrates by high pressure solution method are presented. The finite element calculation using experimentally measured temperatures is used for modeling the convective transport in the liquid gallium. The influence of a baffle and thermal conductivity of the various seeds for convection in liquid metal is analyzed in details.

Original language	English
Pages (from-to)	1539-1542
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778462
Publication status	Published - Dec 1 2008
Externally published	Yes
Event	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: Sept 16 2007 → Sept 21 2007

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200778462

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title = "Liquid phase epitaxy of GaN on MOCVD GaN/sapphire and HVPE free-standing substrates under high nitrogen pressure",

abstract = "Results of liquid phase epitaxy of GaN on MOCVD sapphire/GaN and HVPE free-standing GaN substrates by high pressure solution method are presented. The finite element calculation using experimentally measured temperatures is used for modeling the convective transport in the liquid gallium. The influence of a baffle and thermal conductivity of the various seeds for convection in liquid metal is analyzed in details.",

author = "M. Bockowski and P. Strak and P. Kempisty and I. Grzegory and B. Lucznik and S. Krukowski and S. Porowski",

year = "2008",

month = dec,

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doi = "10.1002/pssc.200778462",

language = "English",

volume = "5",

pages = "1539--1542",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

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number = "6",

note = "7th International Conference of Nitride Semiconductors, ICNS-7 ; Conference date: 16-09-2007 Through 21-09-2007",

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TY - JOUR

T1 - Liquid phase epitaxy of GaN on MOCVD GaN/sapphire and HVPE free-standing substrates under high nitrogen pressure

AU - Bockowski, M.

AU - Strak, P.

AU - Kempisty, P.

AU - Grzegory, I.

AU - Lucznik, B.

AU - Krukowski, S.

AU - Porowski, S.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Results of liquid phase epitaxy of GaN on MOCVD sapphire/GaN and HVPE free-standing GaN substrates by high pressure solution method are presented. The finite element calculation using experimentally measured temperatures is used for modeling the convective transport in the liquid gallium. The influence of a baffle and thermal conductivity of the various seeds for convection in liquid metal is analyzed in details.

AB - Results of liquid phase epitaxy of GaN on MOCVD sapphire/GaN and HVPE free-standing GaN substrates by high pressure solution method are presented. The finite element calculation using experimentally measured temperatures is used for modeling the convective transport in the liquid gallium. The influence of a baffle and thermal conductivity of the various seeds for convection in liquid metal is analyzed in details.

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U2 - 10.1002/pssc.200778462

DO - 10.1002/pssc.200778462

M3 - Conference article

AN - SCOPUS:77951216516

SN - 1862-6351

VL - 5

SP - 1539

EP - 1542

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 6

T2 - 7th International Conference of Nitride Semiconductors, ICNS-7

Y2 - 16 September 2007 through 21 September 2007

ER -

Liquid phase epitaxy of GaN on MOCVD GaN/sapphire and HVPE free-standing substrates under high nitrogen pressure

Abstract

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