Results of liquid phase epitaxy of GaN on MOCVD sapphire/GaN and HVPE free-standing GaN substrates by high pressure solution method are presented. The finite element calculation using experimentally measured temperatures is used for modeling the convective transport in the liquid gallium. The influence of a baffle and thermal conductivity of the various seeds for convection in liquid metal is analyzed in details.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - Dec 1 2008|
|Event||7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States|
Duration: Sep 16 2007 → Sep 21 2007
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics