Liquid-solid coexisting annealing of a-GeSn/Si(100) structure for low temperature epitaxial growth of SiGe

H. Chikita, R. Matsumura, Taizoh Sadoh, M. Miyao

Research output: Contribution to journalArticle

Abstract

To develop a new low-temperature crystallization technique, annealing characteristics of a-GeSn/Si(100) structures are investigated. It is revealed that epitaxial growth accompanying Si-Ge mixing is generated at temperatures in the liquid-solid coexisting region of the Ge-Sn system. The annealing temperature necessary for epitaxial growth is significantly decreased by increasing annealing time and/or Sn concentration. Consequently, epitaxial growth at 300°C becomes possible. These findings are expected to be useful to realize next-generation large-scale integrated circuits, where various multi-functional devices are integrated.

Original languageEnglish
Pages (from-to)257-262
Number of pages6
JournalECS Transactions
Volume58
Issue number9
DOIs
Publication statusPublished - Jan 1 2013

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Epitaxial growth
Annealing
Liquids
Temperature
Integrated circuits
Crystallization

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Liquid-solid coexisting annealing of a-GeSn/Si(100) structure for low temperature epitaxial growth of SiGe. / Chikita, H.; Matsumura, R.; Sadoh, Taizoh; Miyao, M.

In: ECS Transactions, Vol. 58, No. 9, 01.01.2013, p. 257-262.

Research output: Contribution to journalArticle

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