TY - JOUR
T1 - Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing
AU - Fukuda, Ryosuke
AU - Balasubramanian, Priyadharshini
AU - Higashimata, Itaru
AU - Koike, Godai
AU - Okada, Takuma
AU - Kagami, Risa
AU - Teraji, Tokuyuki
AU - Onoda, Shinobu
AU - Haruyama, Moriyoshi
AU - Yamada, Keisuke
AU - Inaba, Masafumi
AU - Yamano, Hayate
AU - Stürner, Felix M.
AU - Schmitt, Simon
AU - McGuinness, Liam P.
AU - Jelezko, Fedor
AU - Ohshima, Takeshi
AU - Shinada, Takahiro
AU - Kawarada, Hiroshi
AU - Kada, Wataru
AU - Hanaizumi, Osamu
AU - Tanii, Takashi
AU - Isoya, Junichi
N1 - Funding Information:
This work was supported by Japan Society of the Promotion of Science (JSPS) KAKENHI (No. 26246001, No. 26220903, No. 25289109, No. 15H03980, No. 17H02751, No. 16K14242, No. 18H03766), and by DFG, BMBF, Volkswagenstiftung, ERC, and BW Stiftung.
PY - 2018/8
Y1 - 2018/8
N2 - The simultaneous control of the number and position of negatively charged nitrogen-vacancy (NV) centers in diamond was achieved. While single near-surface NV centers are known to exhibit outstanding capabilities in external spin sensing, trade-off relationships among the accuracy of the number and position, and the coherence of NV centers have made the use of such engineered NV centers difficult. Namely, low-energy nitrogen implantation with lithographic techniques enables the nanoscale position control but results in degradation of the creation yield and the coherence property. In this paper, we show that low-energy nitrogen ion implantation to a 12C (99.95%)-enriched homoepitaxial diamond layer using nanomask is applicable to create shallow NV centers with a sufficiently long coherence time for external spin sensing, at a high creation yield. Furthermore, the NV centers were arranged in a regular array so that 40% lattice sites contain single NV centers. The XY8-k measurements using the individual NV centers reveal that the created NV centers have depths from 2 to 12 nm, which is comparable to the stopping range of nitrogen ions implanted at 2.5 keV. We show that the position-controlled NV centers are capable of external spin sensing with a ultra-high spatial resolution.
AB - The simultaneous control of the number and position of negatively charged nitrogen-vacancy (NV) centers in diamond was achieved. While single near-surface NV centers are known to exhibit outstanding capabilities in external spin sensing, trade-off relationships among the accuracy of the number and position, and the coherence of NV centers have made the use of such engineered NV centers difficult. Namely, low-energy nitrogen implantation with lithographic techniques enables the nanoscale position control but results in degradation of the creation yield and the coherence property. In this paper, we show that low-energy nitrogen ion implantation to a 12C (99.95%)-enriched homoepitaxial diamond layer using nanomask is applicable to create shallow NV centers with a sufficiently long coherence time for external spin sensing, at a high creation yield. Furthermore, the NV centers were arranged in a regular array so that 40% lattice sites contain single NV centers. The XY8-k measurements using the individual NV centers reveal that the created NV centers have depths from 2 to 12 nm, which is comparable to the stopping range of nitrogen ions implanted at 2.5 keV. We show that the position-controlled NV centers are capable of external spin sensing with a ultra-high spatial resolution.
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U2 - 10.1088/1367-2630/aad997
DO - 10.1088/1367-2630/aad997
M3 - Article
AN - SCOPUS:85053103633
VL - 20
JO - New Journal of Physics
JF - New Journal of Physics
SN - 1367-2630
IS - 8
M1 - 083029
ER -