TY - JOUR
T1 - Little Influence of Kinks on the Formation of c(4 × 2) Domains in a Si(001) Surface at Low Temperature
AU - Tochihara, Hiroshi
AU - Nakamura, Yoshimichi
AU - Kawai, Hiroshi
AU - Nakayama, Masatoshi
AU - Sato, Tomoshige
AU - Sueyoshi, Takashi
AU - Amakusa, Takaaki
AU - Iwatsuki, Masashi
PY - 1998/7
Y1 - 1998/7
N2 - The structure of a Si(001) surface with monatomic steps is investigated by means of scanning tunneling microscopy at 95 K and Monte Carlo simulations (MCS) at various temperatures. In particular, we pay attention to the effect of kinks at the step edge on the formation of c(4 × 2) domains, and both studies reveal that the kinks do not govern the growth of the domains. MCS demonstrates that the nucleation of c(4 × 2) domains takes place at central regions of the terrace as a result of thermal fluctuation, and that the domains propagate to the step edge with decreasing temperature.
AB - The structure of a Si(001) surface with monatomic steps is investigated by means of scanning tunneling microscopy at 95 K and Monte Carlo simulations (MCS) at various temperatures. In particular, we pay attention to the effect of kinks at the step edge on the formation of c(4 × 2) domains, and both studies reveal that the kinks do not govern the growth of the domains. MCS demonstrates that the nucleation of c(4 × 2) domains takes place at central regions of the terrace as a result of thermal fluctuation, and that the domains propagate to the step edge with decreasing temperature.
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U2 - 10.1143/JPSJ.67.2330
DO - 10.1143/JPSJ.67.2330
M3 - Article
AN - SCOPUS:0032338633
VL - 67
SP - 2330
EP - 2334
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 7
ER -