Little Influence of Kinks on the Formation of c(4 × 2) Domains in a Si(001) Surface at Low Temperature

Hiroshi Tochihara; Yoshimichi Nakamura; Hiroshi Kawai; Masatoshi Nakayama; Tomoshige Sato; Takashi Sueyoshi; Takaaki Amakusa; Masashi Iwatsuki

doi:10.1143/JPSJ.67.2330

Little Influence of Kinks on the Formation of c(4 × 2) Domains in a Si(001) Surface at Low Temperature

Hiroshi Tochihara, Yoshimichi Nakamura, Hiroshi Kawai, Masatoshi Nakayama, Tomoshige Sato, Takashi Sueyoshi, Takaaki Amakusa, Masashi Iwatsuki

Condensed Matter Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The structure of a Si(001) surface with monatomic steps is investigated by means of scanning tunneling microscopy at 95 K and Monte Carlo simulations (MCS) at various temperatures. In particular, we pay attention to the effect of kinks at the step edge on the formation of c(4 × 2) domains, and both studies reveal that the kinks do not govern the growth of the domains. MCS demonstrates that the nucleation of c(4 × 2) domains takes place at central regions of the terrace as a result of thermal fluctuation, and that the domains propagate to the step edge with decreasing temperature.

Original language	English
Pages (from-to)	2330-2334
Number of pages	5
Journal	journal of the physical society of japan
Volume	67
Issue number	7
DOIs	https://doi.org/10.1143/JPSJ.67.2330
Publication status	Published - Jul 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1143/JPSJ.67.2330

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Little Influence of Kinks on the Formation of c(4 × 2) Domains in a Si(001) Surface at Low Temperature. / Tochihara, Hiroshi; Nakamura, Yoshimichi; Kawai, Hiroshi; Nakayama, Masatoshi; Sato, Tomoshige; Sueyoshi, Takashi; Amakusa, Takaaki; Iwatsuki, Masashi.

In: journal of the physical society of japan, Vol. 67, No. 7, 07.1998, p. 2330-2334.

Research output: Contribution to journal › Article › peer-review

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AU - Sueyoshi, Takashi

AU - Amakusa, Takaaki

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