Little Influence of Kinks on the Formation of c(4 × 2) Domains in a Si(001) Surface at Low Temperature

Hiroshi Tochihara, Yoshimichi Nakamura, Hiroshi Kawai, Masatoshi Nakayama, Tomoshige Sato, Takashi Sueyoshi, Takaaki Amakusa, Masashi Iwatsuki

Research output: Contribution to journalArticle

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Abstract

The structure of a Si(001) surface with monatomic steps is investigated by means of scanning tunneling microscopy at 95 K and Monte Carlo simulations (MCS) at various temperatures. In particular, we pay attention to the effect of kinks at the step edge on the formation of c(4 × 2) domains, and both studies reveal that the kinks do not govern the growth of the domains. MCS demonstrates that the nucleation of c(4 × 2) domains takes place at central regions of the terrace as a result of thermal fluctuation, and that the domains propagate to the step edge with decreasing temperature.

Original languageEnglish
Pages (from-to)2330-2334
Number of pages5
JournalJournal of the Physical Society of Japan
Volume67
Issue number7
DOIs
Publication statusPublished - Jan 1 1998

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scanning tunneling microscopy
simulation
nucleation
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Little Influence of Kinks on the Formation of c(4 × 2) Domains in a Si(001) Surface at Low Temperature. / Tochihara, Hiroshi; Nakamura, Yoshimichi; Kawai, Hiroshi; Nakayama, Masatoshi; Sato, Tomoshige; Sueyoshi, Takashi; Amakusa, Takaaki; Iwatsuki, Masashi.

In: Journal of the Physical Society of Japan, Vol. 67, No. 7, 01.01.1998, p. 2330-2334.

Research output: Contribution to journalArticle

Tochihara, H, Nakamura, Y, Kawai, H, Nakayama, M, Sato, T, Sueyoshi, T, Amakusa, T & Iwatsuki, M 1998, 'Little Influence of Kinks on the Formation of c(4 × 2) Domains in a Si(001) Surface at Low Temperature', Journal of the Physical Society of Japan, vol. 67, no. 7, pp. 2330-2334. https://doi.org/10.1143/JPSJ.67.2330
Tochihara, Hiroshi ; Nakamura, Yoshimichi ; Kawai, Hiroshi ; Nakayama, Masatoshi ; Sato, Tomoshige ; Sueyoshi, Takashi ; Amakusa, Takaaki ; Iwatsuki, Masashi. / Little Influence of Kinks on the Formation of c(4 × 2) Domains in a Si(001) Surface at Low Temperature. In: Journal of the Physical Society of Japan. 1998 ; Vol. 67, No. 7. pp. 2330-2334.
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