Little Influence of Kinks on the Formation of c(4 × 2) Domains in a Si(001) Surface at Low Temperature

Hiroshi Tochihara, Yoshimichi Nakamura, Hiroshi Kawai, Masatoshi Nakayama, Tomoshige Sato, Takashi Sueyoshi, Takaaki Amakusa, Masashi Iwatsuki

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The structure of a Si(001) surface with monatomic steps is investigated by means of scanning tunneling microscopy at 95 K and Monte Carlo simulations (MCS) at various temperatures. In particular, we pay attention to the effect of kinks at the step edge on the formation of c(4 × 2) domains, and both studies reveal that the kinks do not govern the growth of the domains. MCS demonstrates that the nucleation of c(4 × 2) domains takes place at central regions of the terrace as a result of thermal fluctuation, and that the domains propagate to the step edge with decreasing temperature.

Original languageEnglish
Pages (from-to)2330-2334
Number of pages5
Journaljournal of the physical society of japan
Volume67
Issue number7
DOIs
Publication statusPublished - Jul 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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