Abstract
The structure of a Si(001) surface with monatomic steps is investigated by means of scanning tunneling microscopy at 95 K and Monte Carlo simulations (MCS) at various temperatures. In particular, we pay attention to the effect of kinks at the step edge on the formation of c(4 × 2) domains, and both studies reveal that the kinks do not govern the growth of the domains. MCS demonstrates that the nucleation of c(4 × 2) domains takes place at central regions of the terrace as a result of thermal fluctuation, and that the domains propagate to the step edge with decreasing temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 2330-2334 |
| Number of pages | 5 |
| Journal | Journal of the Physical Society of Japan |
| Volume | 67 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jan 1 1998 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
Little Influence of Kinks on the Formation of c(4 × 2) Domains in a Si(001) Surface at Low Temperature. / Tochihara, Hiroshi; Nakamura, Yoshimichi; Kawai, Hiroshi; Nakayama, Masatoshi; Sato, Tomoshige; Sueyoshi, Takashi; Amakusa, Takaaki; Iwatsuki, Masashi.
In: Journal of the Physical Society of Japan, Vol. 67, No. 7, 01.01.1998, p. 2330-2334.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Little Influence of Kinks on the Formation of c(4 × 2) Domains in a Si(001) Surface at Low Temperature
AU - Tochihara, Hiroshi
AU - Nakamura, Yoshimichi
AU - Kawai, Hiroshi
AU - Nakayama, Masatoshi
AU - Sato, Tomoshige
AU - Sueyoshi, Takashi
AU - Amakusa, Takaaki
AU - Iwatsuki, Masashi
PY - 1998/1/1
Y1 - 1998/1/1
N2 - The structure of a Si(001) surface with monatomic steps is investigated by means of scanning tunneling microscopy at 95 K and Monte Carlo simulations (MCS) at various temperatures. In particular, we pay attention to the effect of kinks at the step edge on the formation of c(4 × 2) domains, and both studies reveal that the kinks do not govern the growth of the domains. MCS demonstrates that the nucleation of c(4 × 2) domains takes place at central regions of the terrace as a result of thermal fluctuation, and that the domains propagate to the step edge with decreasing temperature.
AB - The structure of a Si(001) surface with monatomic steps is investigated by means of scanning tunneling microscopy at 95 K and Monte Carlo simulations (MCS) at various temperatures. In particular, we pay attention to the effect of kinks at the step edge on the formation of c(4 × 2) domains, and both studies reveal that the kinks do not govern the growth of the domains. MCS demonstrates that the nucleation of c(4 × 2) domains takes place at central regions of the terrace as a result of thermal fluctuation, and that the domains propagate to the step edge with decreasing temperature.
UR - http://www.scopus.com/inward/record.url?scp=0032338633&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032338633&partnerID=8YFLogxK
U2 - 10.1143/JPSJ.67.2330
DO - 10.1143/JPSJ.67.2330
M3 - Article
AN - SCOPUS:0032338633
VL - 67
SP - 2330
EP - 2334
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 7
ER -