Ln dependence in Ln2CuO4 buffer layers of c-axis in-plane aligned a-axis oriented YBa2Cu3O7-δ thin film growth

Masashi Mukaida, M. Kusunoki, S. Ohshima

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Lanthanide (Ln) atom in Ln2CuO4 buffer layer dependence of c-axis in-plane aligned a-axis oriented YBa2Cu3O7-δ (YBCO) thin film growth is discussed and preferred orientation growth model of a bc-plane matched growth model is proposed. The c-axis in-plane aligned a-axis oriented YBCO thin films are very attractive from both the researches on the origin of high Tc superconductors and microelectronics device applications. However the c-axis in-plane aligned a-axis oriented films are difficult to grow. We have been proposing Ln2CuO4 buffer layers for the c-axis in-plane aligned a-axis oriented YBCO thin film growth. We have examined various Ln atoms in Ln2CuO4 buffer layers for the growth of YBCO thin films by pulsed laser deposition. From a lattice matching point of view, a Tb2CuO4 buffer layer is the best one for the c-axis in-plane aligned a-axis oriented YBCO thin films. However the result shows that the Nd2CuO4 and Tb2CuO4 buffer layer causes YBCO thin films with c-axis oriented portion about 35% and 32%, by X-ray diffraction peaks, which is much larger than those on Gd2CuO4 buffer layers (7.4%). The most promising Ln atom in Ln2CuO4 buffer layers for the growth of the c-axis in-plane aligned a-axis oriented YBCO thin films so far is Gd2CuO4 buffer layers or Eu2CuO4 buffer layers.

Original languageEnglish
Pages (from-to)1382-1385
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume357-360
Issue numberSUPPL. 1
DOIs
Publication statusPublished - Sep 1 2001
Externally publishedYes

Fingerprint

Lanthanoid Series Elements
Film growth
Buffer layers
Rare earth elements
buffers
Thin films
thin films
Atoms
barium copper yttrium oxide
Pulsed laser deposition
Microelectronics
atoms
Superconducting materials
microelectronics
X ray diffraction
pulsed laser deposition

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Ln dependence in Ln2CuO4 buffer layers of c-axis in-plane aligned a-axis oriented YBa2Cu3O7-δ thin film growth. / Mukaida, Masashi; Kusunoki, M.; Ohshima, S.

In: Physica C: Superconductivity and its applications, Vol. 357-360, No. SUPPL. 1, 01.09.2001, p. 1382-1385.

Research output: Contribution to journalArticle

@article{08457bd0c567433abbb2b578cee8e235,
title = "Ln dependence in Ln2CuO4 buffer layers of c-axis in-plane aligned a-axis oriented YBa2Cu3O7-δ thin film growth",
abstract = "Lanthanide (Ln) atom in Ln2CuO4 buffer layer dependence of c-axis in-plane aligned a-axis oriented YBa2Cu3O7-δ (YBCO) thin film growth is discussed and preferred orientation growth model of a bc-plane matched growth model is proposed. The c-axis in-plane aligned a-axis oriented YBCO thin films are very attractive from both the researches on the origin of high Tc superconductors and microelectronics device applications. However the c-axis in-plane aligned a-axis oriented films are difficult to grow. We have been proposing Ln2CuO4 buffer layers for the c-axis in-plane aligned a-axis oriented YBCO thin film growth. We have examined various Ln atoms in Ln2CuO4 buffer layers for the growth of YBCO thin films by pulsed laser deposition. From a lattice matching point of view, a Tb2CuO4 buffer layer is the best one for the c-axis in-plane aligned a-axis oriented YBCO thin films. However the result shows that the Nd2CuO4 and Tb2CuO4 buffer layer causes YBCO thin films with c-axis oriented portion about 35{\%} and 32{\%}, by X-ray diffraction peaks, which is much larger than those on Gd2CuO4 buffer layers (7.4{\%}). The most promising Ln atom in Ln2CuO4 buffer layers for the growth of the c-axis in-plane aligned a-axis oriented YBCO thin films so far is Gd2CuO4 buffer layers or Eu2CuO4 buffer layers.",
author = "Masashi Mukaida and M. Kusunoki and S. Ohshima",
year = "2001",
month = "9",
day = "1",
doi = "10.1016/S0921-4534(01)00594-9",
language = "English",
volume = "357-360",
pages = "1382--1385",
journal = "Physica C: Superconductivity and its Applications",
issn = "0921-4534",
publisher = "Elsevier",
number = "SUPPL. 1",

}

TY - JOUR

T1 - Ln dependence in Ln2CuO4 buffer layers of c-axis in-plane aligned a-axis oriented YBa2Cu3O7-δ thin film growth

AU - Mukaida, Masashi

AU - Kusunoki, M.

AU - Ohshima, S.

PY - 2001/9/1

Y1 - 2001/9/1

N2 - Lanthanide (Ln) atom in Ln2CuO4 buffer layer dependence of c-axis in-plane aligned a-axis oriented YBa2Cu3O7-δ (YBCO) thin film growth is discussed and preferred orientation growth model of a bc-plane matched growth model is proposed. The c-axis in-plane aligned a-axis oriented YBCO thin films are very attractive from both the researches on the origin of high Tc superconductors and microelectronics device applications. However the c-axis in-plane aligned a-axis oriented films are difficult to grow. We have been proposing Ln2CuO4 buffer layers for the c-axis in-plane aligned a-axis oriented YBCO thin film growth. We have examined various Ln atoms in Ln2CuO4 buffer layers for the growth of YBCO thin films by pulsed laser deposition. From a lattice matching point of view, a Tb2CuO4 buffer layer is the best one for the c-axis in-plane aligned a-axis oriented YBCO thin films. However the result shows that the Nd2CuO4 and Tb2CuO4 buffer layer causes YBCO thin films with c-axis oriented portion about 35% and 32%, by X-ray diffraction peaks, which is much larger than those on Gd2CuO4 buffer layers (7.4%). The most promising Ln atom in Ln2CuO4 buffer layers for the growth of the c-axis in-plane aligned a-axis oriented YBCO thin films so far is Gd2CuO4 buffer layers or Eu2CuO4 buffer layers.

AB - Lanthanide (Ln) atom in Ln2CuO4 buffer layer dependence of c-axis in-plane aligned a-axis oriented YBa2Cu3O7-δ (YBCO) thin film growth is discussed and preferred orientation growth model of a bc-plane matched growth model is proposed. The c-axis in-plane aligned a-axis oriented YBCO thin films are very attractive from both the researches on the origin of high Tc superconductors and microelectronics device applications. However the c-axis in-plane aligned a-axis oriented films are difficult to grow. We have been proposing Ln2CuO4 buffer layers for the c-axis in-plane aligned a-axis oriented YBCO thin film growth. We have examined various Ln atoms in Ln2CuO4 buffer layers for the growth of YBCO thin films by pulsed laser deposition. From a lattice matching point of view, a Tb2CuO4 buffer layer is the best one for the c-axis in-plane aligned a-axis oriented YBCO thin films. However the result shows that the Nd2CuO4 and Tb2CuO4 buffer layer causes YBCO thin films with c-axis oriented portion about 35% and 32%, by X-ray diffraction peaks, which is much larger than those on Gd2CuO4 buffer layers (7.4%). The most promising Ln atom in Ln2CuO4 buffer layers for the growth of the c-axis in-plane aligned a-axis oriented YBCO thin films so far is Gd2CuO4 buffer layers or Eu2CuO4 buffer layers.

UR - http://www.scopus.com/inward/record.url?scp=0035451641&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035451641&partnerID=8YFLogxK

U2 - 10.1016/S0921-4534(01)00594-9

DO - 10.1016/S0921-4534(01)00594-9

M3 - Article

AN - SCOPUS:0035451641

VL - 357-360

SP - 1382

EP - 1385

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - SUPPL. 1

ER -