TY - GEN
T1 - Local, isotropic, and damageless doping to oxide semiconductors by using electrochemistry
AU - Yajima, Takeaki
AU - Nishimura, Tomonori
AU - Toriumi, Akira
N1 - Publisher Copyright:
© 2017 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/6/13
Y1 - 2017/6/13
N2 - Electrochemical doping, which introduces dopant impurities via isotropic electrochemical reaction, was proposed and demonstrated in an archetypical oxide semiconductor TiO2. By controlling electrochemical potential of TiO2 in electrolyte, the technique successfully introduced dopants to increase the conductivity of TiO2 by ∼5 orders. The technique was also applied through micro-patterned photo resist, verifying nano-scale compatibility. The dopants, which are hydrogen or oxygen vacancy in this case, were stabilized with an activation energy of 1.2 eV, making this technique attractive for oxide devices in displays, sensors, solar cells, and neuromorphic circuits.
AB - Electrochemical doping, which introduces dopant impurities via isotropic electrochemical reaction, was proposed and demonstrated in an archetypical oxide semiconductor TiO2. By controlling electrochemical potential of TiO2 in electrolyte, the technique successfully introduced dopants to increase the conductivity of TiO2 by ∼5 orders. The technique was also applied through micro-patterned photo resist, verifying nano-scale compatibility. The dopants, which are hydrogen or oxygen vacancy in this case, were stabilized with an activation energy of 1.2 eV, making this technique attractive for oxide devices in displays, sensors, solar cells, and neuromorphic circuits.
UR - http://www.scopus.com/inward/record.url?scp=85021983247&partnerID=8YFLogxK
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U2 - 10.1109/EDTM.2017.7947526
DO - 10.1109/EDTM.2017.7947526
M3 - Conference contribution
AN - SCOPUS:85021983247
T3 - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
SP - 80
EP - 81
BT - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Y2 - 28 February 2017 through 2 March 2017
ER -