Local, isotropic, and damageless doping to oxide semiconductors by using electrochemistry

Takeaki Yajima; Tomonori Nishimura; Akira Toriumi

doi:10.1109/EDTM.2017.7947526

Local, isotropic, and damageless doping to oxide semiconductors by using electrochemistry

Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electrochemical doping, which introduces dopant impurities via isotropic electrochemical reaction, was proposed and demonstrated in an archetypical oxide semiconductor TiO₂. By controlling electrochemical potential of TiO₂ in electrolyte, the technique successfully introduced dopants to increase the conductivity of TiO₂ by ∼5 orders. The technique was also applied through micro-patterned photo resist, verifying nano-scale compatibility. The dopants, which are hydrogen or oxygen vacancy in this case, were stabilized with an activation energy of 1.2 eV, making this technique attractive for oxide devices in displays, sensors, solar cells, and neuromorphic circuits.

Original language	English
Title of host publication	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	80-81
Number of pages	2
ISBN (Electronic)	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947526
Publication status	Published - Jun 13 2017
Externally published	Yes
Event	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan Duration: Feb 28 2017 → Mar 2 2017

Publication series

Name	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/Territory	Japan
City	Toyama
Period	2/28/17 → 3/2/17

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDTM.2017.7947526

Cite this

Yajima, T., Nishimura, T., & Toriumi, A. (2017). Local, isotropic, and damageless doping to oxide semiconductors by using electrochemistry. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 80-81). [7947526] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947526

Local, isotropic, and damageless doping to oxide semiconductors by using electrochemistry. / Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira.

2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 80-81 7947526 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yajima, T, Nishimura, T & Toriumi, A 2017, Local, isotropic, and damageless doping to oxide semiconductors by using electrochemistry. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947526, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 80-81, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 2/28/17. https://doi.org/10.1109/EDTM.2017.7947526

Yajima T, Nishimura T, Toriumi A. Local, isotropic, and damageless doping to oxide semiconductors by using electrochemistry. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 80-81. 7947526. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). https://doi.org/10.1109/EDTM.2017.7947526

Yajima, Takeaki ; Nishimura, Tomonori ; Toriumi, Akira. / Local, isotropic, and damageless doping to oxide semiconductors by using electrochemistry. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 80-81 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

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abstract = "Electrochemical doping, which introduces dopant impurities via isotropic electrochemical reaction, was proposed and demonstrated in an archetypical oxide semiconductor TiO2. By controlling electrochemical potential of TiO2 in electrolyte, the technique successfully introduced dopants to increase the conductivity of TiO2 by ∼5 orders. The technique was also applied through micro-patterned photo resist, verifying nano-scale compatibility. The dopants, which are hydrogen or oxygen vacancy in this case, were stabilized with an activation energy of 1.2 eV, making this technique attractive for oxide devices in displays, sensors, solar cells, and neuromorphic circuits.",

author = "Takeaki Yajima and Tomonori Nishimura and Akira Toriumi",

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doi = "10.1109/EDTM.2017.7947526",

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AB - Electrochemical doping, which introduces dopant impurities via isotropic electrochemical reaction, was proposed and demonstrated in an archetypical oxide semiconductor TiO2. By controlling electrochemical potential of TiO2 in electrolyte, the technique successfully introduced dopants to increase the conductivity of TiO2 by ∼5 orders. The technique was also applied through micro-patterned photo resist, verifying nano-scale compatibility. The dopants, which are hydrogen or oxygen vacancy in this case, were stabilized with an activation energy of 1.2 eV, making this technique attractive for oxide devices in displays, sensors, solar cells, and neuromorphic circuits.

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Local, isotropic, and damageless doping to oxide semiconductors by using electrochemistry

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