Local, isotropic, and damageless doping to oxide semiconductors by using electrochemistry

Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electrochemical doping, which introduces dopant impurities via isotropic electrochemical reaction, was proposed and demonstrated in an archetypical oxide semiconductor TiO2. By controlling electrochemical potential of TiO2 in electrolyte, the technique successfully introduced dopants to increase the conductivity of TiO2 by ∼5 orders. The technique was also applied through micro-patterned photo resist, verifying nano-scale compatibility. The dopants, which are hydrogen or oxygen vacancy in this case, were stabilized with an activation energy of 1.2 eV, making this technique attractive for oxide devices in displays, sensors, solar cells, and neuromorphic circuits.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages80-81
Number of pages2
ISBN (Electronic)9781509046591
DOIs
Publication statusPublished - Jun 13 2017
Externally publishedYes
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: Feb 28 2017Mar 2 2017

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period2/28/173/2/17

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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