Local retarding field for ions towards a positively biased substrate in plasma and its application to soft ion-bombardment processing

Kungen Tsutsui, Seiichiro Matsumoto

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A potential rise acting as a local retarding field for drifting ions has been observed in front of a positively biased electron-absorbing substrate in a downstream, electron cyclotron resonance plasma. Increasing positive substrate bias shifted the plasma potential upward and decreased the sheath potential to a certain minimum (5-13 V) depending upon pressure (0.7-5 mTorr), to satisfy a current balance between the substrate holder and the surrounding wall. For the minimal sheath potential, the incident ion flux to the substrate was shown to decrease with increasing bias due to prevention of ion arrival by the retarding field. Soft ion bombardment at the minimal sheath potential in a hydrogen plasma was then used to etch silicon wafer surfaces as in vacuo pretreatment for nanocrystalline diamond deposition. The highest diamond particle density of the order of 107 cm-2 was finally obtained on a clean and smooth surface with minimal damage formed by low energy (≃10 eV), high flux ion irradiation.

Original languageEnglish
Article number013302
JournalJournal of Applied Physics
Volume101
Issue number1
DOIs
Publication statusPublished - Jan 24 2007

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bombardment
sheaths
retarding
ions
diamonds
plasma potentials
hydrogen plasma
holders
electron cyclotron resonance
ion irradiation
pretreatment
arrivals
wafers
damage
silicon
electrons
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Local retarding field for ions towards a positively biased substrate in plasma and its application to soft ion-bombardment processing. / Tsutsui, Kungen; Matsumoto, Seiichiro.

In: Journal of Applied Physics, Vol. 101, No. 1, 013302, 24.01.2007.

Research output: Contribution to journalArticle

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