Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation

Dong Wang, Haigui Yang, Jun Morioka, Tokuhide Kitamura, Hiroshi Nakashima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

UV laser excited microphotoluminescence (PL) was used to evaluate the local strain for freestanding Si membranes (FSSMs), which can be applied to the fabrication of high performance radiofrequency (RF) power amplifier. The FSSMs were fabricated by the mesa etching of Si on insulator followed by etching of the buried oxide. Compressive strain in the membranes was induced by SiN deposition using low-pressure chemical vapor deposition. By the optimization of optics, we successfully observed PLs for FSSMs by a 325 nm laser excitation, which eliminated the substrate-related PL (S-PL) and improved the accuracy of the identification for PL peaks. Strain-induced band gap narrowing was directly observed by identifying the PL peak of the free exciton band-band transition in membranes, from which the strain ratio was estimated for each sample. Strain was reasonably dependent on the sample parameters, which implies that this measurement gives valid results. Based on the improved accuracy of PL peak identification by a UV laser excitation, a minor revision of the strain ratio results was also performed for our previous report for the same samples, which were measured by a 514 nm laser excited PL.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages684-687
Number of pages4
DOIs
Publication statusPublished - 2008
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: Oct 20 2008Oct 23 2008

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period10/20/0810/23/08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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    Wang, D., Yang, H., Morioka, J., Kitamura, T., & Nakashima, H. (2008). Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 684-687). [4734646] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734646