Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence

Dong Wang; Hiroshi Nakashima; Masanori Tanaka; Taizoh Sadoh; Masanobu Miyao; Jun Morioka; Tokuhide Kitamura

doi:10.1016/j.tsf.2008.08.021

Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence

Dong Wang, Hiroshi Nakashima, Masanori Tanaka, Taizoh Sadoh, Masanobu Miyao, Jun Morioka, Tokuhide Kitamura

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Local strain evaluation was performed for single crystal Si pillar (SCSP) by micro Raman spectroscopy and photoluminescence (PL). SCSPs were fabricated by the mesa etching of Si-on-insulator followed by the etching of the buried oxide. The compressive strain was induced to SCSPs by SiN deposition using low-pressure chemical vapor deposition. The strain distribution was clearly observed in the plane of a certain pattern of SCSP. Strain ratio comparison was also performed for SCSPs with different shapes and sizes. Defect-related PL signals were also observed.

Original language	English
Pages (from-to)	31-33
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.021
Publication status	Published - Nov 3 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2008.08.021

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@article{4ab52b1ab1ca47068ae9a093f7ed6a51,

title = "Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence",

abstract = "Local strain evaluation was performed for single crystal Si pillar (SCSP) by micro Raman spectroscopy and photoluminescence (PL). SCSPs were fabricated by the mesa etching of Si-on-insulator followed by the etching of the buried oxide. The compressive strain was induced to SCSPs by SiN deposition using low-pressure chemical vapor deposition. The strain distribution was clearly observed in the plane of a certain pattern of SCSP. Strain ratio comparison was also performed for SCSPs with different shapes and sizes. Defect-related PL signals were also observed.",

author = "Dong Wang and Hiroshi Nakashima and Masanori Tanaka and Taizoh Sadoh and Masanobu Miyao and Jun Morioka and Tokuhide Kitamura",

note = "Funding Information: This study was partially supported by a Grant-in-Aid for Scientific Research from Japan Society for the Promotion of Science and Japan Science and Technology Agency.",

year = "2008",

month = nov,

day = "3",

doi = "10.1016/j.tsf.2008.08.021",

language = "English",

volume = "517",

pages = "31--33",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence

AU - Wang, Dong

AU - Nakashima, Hiroshi

AU - Tanaka, Masanori

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

AU - Morioka, Jun

AU - Kitamura, Tokuhide

N1 - Funding Information: This study was partially supported by a Grant-in-Aid for Scientific Research from Japan Society for the Promotion of Science and Japan Science and Technology Agency.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - Local strain evaluation was performed for single crystal Si pillar (SCSP) by micro Raman spectroscopy and photoluminescence (PL). SCSPs were fabricated by the mesa etching of Si-on-insulator followed by the etching of the buried oxide. The compressive strain was induced to SCSPs by SiN deposition using low-pressure chemical vapor deposition. The strain distribution was clearly observed in the plane of a certain pattern of SCSP. Strain ratio comparison was also performed for SCSPs with different shapes and sizes. Defect-related PL signals were also observed.

AB - Local strain evaluation was performed for single crystal Si pillar (SCSP) by micro Raman spectroscopy and photoluminescence (PL). SCSPs were fabricated by the mesa etching of Si-on-insulator followed by the etching of the buried oxide. The compressive strain was induced to SCSPs by SiN deposition using low-pressure chemical vapor deposition. The strain distribution was clearly observed in the plane of a certain pattern of SCSP. Strain ratio comparison was also performed for SCSPs with different shapes and sizes. Defect-related PL signals were also observed.

UR - http://www.scopus.com/inward/record.url?scp=54849419484&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54849419484&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2008.08.021

DO - 10.1016/j.tsf.2008.08.021

M3 - Article

AN - SCOPUS:54849419484

SN - 0040-6090

VL - 517

SP - 31

EP - 33

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence

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