Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence

Dong Wang, Hiroshi Nakashima, Masanori Tanaka, Taizoh Sadoh, Masanobu Miyao, Jun Morioka, Tokuhide Kitamura

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Local strain evaluation was performed for single crystal Si pillar (SCSP) by micro Raman spectroscopy and photoluminescence (PL). SCSPs were fabricated by the mesa etching of Si-on-insulator followed by the etching of the buried oxide. The compressive strain was induced to SCSPs by SiN deposition using low-pressure chemical vapor deposition. The strain distribution was clearly observed in the plane of a certain pattern of SCSP. Strain ratio comparison was also performed for SCSPs with different shapes and sizes. Defect-related PL signals were also observed.

Original languageEnglish
Pages (from-to)31-33
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - Nov 3 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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