Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator

M. Nishisaka, O. Shirata, D. Sakamoto, T. Enokida, H. Hagino, T. Asano

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have applied wet oxidation to the isolation and gate oxidation of strained-Si/SiGe-on-insulator (SGOI) wafers. Wet oxidation of Si0.8Ge0.2 at 700 °C proceeds 30 times as fast as the oxidation rate of strained-Si and without forming a Ge condensed layer behind (SiGe)O2. P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) on 15% Ge strained-Si/SGOI wafers were fabricated using wet oxidation to simultaneously form the (SiGe)O2 field oxide and the gate SiO2. Transconductance was found to be enhanced by 50% when compared with unstrained SOI devices.

Original languageEnglish
Pages (from-to)256-259
Number of pages4
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - Jun 5 2006

Fingerprint

insulators
Oxidation
oxidation
wafers
SOI (semiconductors)
Transconductance
MOSFET devices
transconductance
metal oxide semiconductors
Oxides
isolation
field effect transistors
oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Nishisaka, M., Shirata, O., Sakamoto, D., Enokida, T., Hagino, H., & Asano, T. (2006). Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator. Thin Solid Films, 508(1-2), 256-259. https://doi.org/10.1016/j.tsf.2005.06.107

Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator. / Nishisaka, M.; Shirata, O.; Sakamoto, D.; Enokida, T.; Hagino, H.; Asano, T.

In: Thin Solid Films, Vol. 508, No. 1-2, 05.06.2006, p. 256-259.

Research output: Contribution to journalArticle

Nishisaka, M, Shirata, O, Sakamoto, D, Enokida, T, Hagino, H & Asano, T 2006, 'Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator', Thin Solid Films, vol. 508, no. 1-2, pp. 256-259. https://doi.org/10.1016/j.tsf.2005.06.107
Nishisaka M, Shirata O, Sakamoto D, Enokida T, Hagino H, Asano T. Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator. Thin Solid Films. 2006 Jun 5;508(1-2):256-259. https://doi.org/10.1016/j.tsf.2005.06.107
Nishisaka, M. ; Shirata, O. ; Sakamoto, D. ; Enokida, T. ; Hagino, H. ; Asano, T. / Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator. In: Thin Solid Films. 2006 ; Vol. 508, No. 1-2. pp. 256-259.
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