Location and orientation control of Si grain by combining metal-induced lateral crystallization and excimer laser annealing

Naoyuki Higashi, Gou Nakagawa, Tanemasa Asano, Mitsutoshi Miyasaka, John Stoemenos

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A new technique of controlling the location and orientation of Si grain by combining metal-induced lateral crystallization (MILC) and excimer laser annealing (ELA) is proposed. A starting amorphous Si (a-Si) film is deposited on a SiO2 substrate having shallow pits. MILC is used to crystallize the a-Si film in a highly oriented polycrystal. ELA is used to recrystallize the highly oriented polycrystalline Si film. ELA produces large Si grains at the shallow pit sites because temperature gradient is generated by slanting Si surface on the slope of the pit. Si grains whose size is approximately 1.6 μm were formed at the pit sites. Electron backscatter diffraction pattern (EBSP) analysis showed that the crystal orientation aligned over the grain boundary.

Original languageEnglish
Pages (from-to)4347-4350
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume45
Issue number5 B
DOIs
Publication statusPublished - May 25 2006
Externally publishedYes

Fingerprint

laser annealing
Excimer lasers
excimer lasers
Crystallization
Annealing
crystallization
Metals
metals
lasers
Polycrystals
Electron diffraction
Crystal orientation
Thermal gradients
Diffraction patterns
Grain boundaries
polycrystals
temperature gradients
diffraction patterns
grain boundaries
grain size

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Location and orientation control of Si grain by combining metal-induced lateral crystallization and excimer laser annealing. / Higashi, Naoyuki; Nakagawa, Gou; Asano, Tanemasa; Miyasaka, Mitsutoshi; Stoemenos, John.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 45, No. 5 B, 25.05.2006, p. 4347-4350.

Research output: Contribution to journalArticle

Higashi, Naoyuki ; Nakagawa, Gou ; Asano, Tanemasa ; Miyasaka, Mitsutoshi ; Stoemenos, John. / Location and orientation control of Si grain by combining metal-induced lateral crystallization and excimer laser annealing. In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 2006 ; Vol. 45, No. 5 B. pp. 4347-4350.
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