Abstract
Location of crystal grains is controlled in excimer laser crystallization (ELC) of amorphous Si (a-Si) thin films, aiming at a high-performance single-grain thin film transistor (TFT) whose channel is inside a single crystal grain with no grain boundary in the channel. The location control is achieved by manipulating seed-crystal forming sites in the starting thin film. The sites are small portions of the a-Si thin film, typically 1 μm in diameter, only in which nanometer-sized crystallites are embedded in the amorphous matrix. During the ELC, at least one crystallite survives the melting duration and serves as a seed crystal for the resolidification of the surrounding molten silicon. As a result, large crystal grains are formed at the predetermined sites. The TFTs whose channels are fabricated at the location-controlled crystal grains exhibit higher performance than the random polycrystalline Si (poly-Si) TFTs.
| Original language | English |
|---|---|
| Pages (from-to) | 277-282 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 808 |
| Publication status | Published - Dec 1 2004 |
| Event | Amorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 16 2004 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs. / Kumomi, Hideya; Wakiyama, Hiroaki; Nakagawa, Gou; Makihira, Kenji; Asano, Tanemasa.
In: Materials Research Society Symposium Proceedings, Vol. 808, 01.12.2004, p. 277-282.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs
AU - Kumomi, Hideya
AU - Wakiyama, Hiroaki
AU - Nakagawa, Gou
AU - Makihira, Kenji
AU - Asano, Tanemasa
PY - 2004/12/1
Y1 - 2004/12/1
N2 - Location of crystal grains is controlled in excimer laser crystallization (ELC) of amorphous Si (a-Si) thin films, aiming at a high-performance single-grain thin film transistor (TFT) whose channel is inside a single crystal grain with no grain boundary in the channel. The location control is achieved by manipulating seed-crystal forming sites in the starting thin film. The sites are small portions of the a-Si thin film, typically 1 μm in diameter, only in which nanometer-sized crystallites are embedded in the amorphous matrix. During the ELC, at least one crystallite survives the melting duration and serves as a seed crystal for the resolidification of the surrounding molten silicon. As a result, large crystal grains are formed at the predetermined sites. The TFTs whose channels are fabricated at the location-controlled crystal grains exhibit higher performance than the random polycrystalline Si (poly-Si) TFTs.
AB - Location of crystal grains is controlled in excimer laser crystallization (ELC) of amorphous Si (a-Si) thin films, aiming at a high-performance single-grain thin film transistor (TFT) whose channel is inside a single crystal grain with no grain boundary in the channel. The location control is achieved by manipulating seed-crystal forming sites in the starting thin film. The sites are small portions of the a-Si thin film, typically 1 μm in diameter, only in which nanometer-sized crystallites are embedded in the amorphous matrix. During the ELC, at least one crystallite survives the melting duration and serves as a seed crystal for the resolidification of the surrounding molten silicon. As a result, large crystal grains are formed at the predetermined sites. The TFTs whose channels are fabricated at the location-controlled crystal grains exhibit higher performance than the random polycrystalline Si (poly-Si) TFTs.
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M3 - Conference article
AN - SCOPUS:12744259340
VL - 808
SP - 277
EP - 282
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -