Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs

Hideya Kumomi, Hiroaki Wakiyama, Gou Nakagawa, Kenji Makihira, Tanemasa Asano

Research output: Contribution to journalConference article

Abstract

Location of crystal grains is controlled in excimer laser crystallization (ELC) of amorphous Si (a-Si) thin films, aiming at a high-performance single-grain thin film transistor (TFT) whose channel is inside a single crystal grain with no grain boundary in the channel. The location control is achieved by manipulating seed-crystal forming sites in the starting thin film. The sites are small portions of the a-Si thin film, typically 1 μm in diameter, only in which nanometer-sized crystallites are embedded in the amorphous matrix. During the ELC, at least one crystallite survives the melting duration and serves as a seed crystal for the resolidification of the surrounding molten silicon. As a result, large crystal grains are formed at the predetermined sites. The TFTs whose channels are fabricated at the location-controlled crystal grains exhibit higher performance than the random polycrystalline Si (poly-Si) TFTs.

Original languageEnglish
Pages (from-to)277-282
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume808
Publication statusPublished - Dec 1 2004
EventAmorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States
Duration: Apr 13 2004Apr 16 2004

Fingerprint

Excimer lasers
Silicon
Crystallization
silicon
crystallization
laser
crystal
Thin films
Crystals
Thin film transistors
Crystallites
Seed
Molten materials
grain boundary
Grain boundaries
Melting
Single crystals
melting
seed
matrix

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs. / Kumomi, Hideya; Wakiyama, Hiroaki; Nakagawa, Gou; Makihira, Kenji; Asano, Tanemasa.

In: Materials Research Society Symposium Proceedings, Vol. 808, 01.12.2004, p. 277-282.

Research output: Contribution to journalConference article

Kumomi, Hideya ; Wakiyama, Hiroaki ; Nakagawa, Gou ; Makihira, Kenji ; Asano, Tanemasa. / Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs. In: Materials Research Society Symposium Proceedings. 2004 ; Vol. 808. pp. 277-282.
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