Longitudinal electron drift mobility of hydrogenated amorphous silicon/silicon nitride multilayer structures revealed by time-of-flight measurements

Reiji Hattori, J. Shirafuji

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Electron drift mobility longitudinal to hydrogenated amorphous silicon/silicon nitride multilayer structures has been measured by the time-of-flight method. Transient photocurrent shows a clear kink corresponding to the transit time. The room-temperature electron mobility in multilayer structures is smaller by three or four orders of magnitude than that observed in bulk a-Si:H. The room-temperature electron mobility decreases with decreasing well layer width at constant layer thickness of 13 Å, while the activation energy of the mobility increases. The lifetime of electrons tends to increase when the well layer thickness is reduced.

Original languageEnglish
Pages (from-to)1118-1120
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number12
DOIs
Publication statusPublished - 1989
Externally publishedYes

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silicon nitrides
laminates
amorphous silicon
electron mobility
electrons
room temperature
transit time
photocurrents
activation energy
life (durability)

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Electron drift mobility longitudinal to hydrogenated amorphous silicon/silicon nitride multilayer structures has been measured by the time-of-flight method. Transient photocurrent shows a clear kink corresponding to the transit time. The room-temperature electron mobility in multilayer structures is smaller by three or four orders of magnitude than that observed in bulk a-Si:H. The room-temperature electron mobility decreases with decreasing well layer width at constant layer thickness of 13 {\AA}, while the activation energy of the mobility increases. The lifetime of electrons tends to increase when the well layer thickness is reduced.",
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N2 - Electron drift mobility longitudinal to hydrogenated amorphous silicon/silicon nitride multilayer structures has been measured by the time-of-flight method. Transient photocurrent shows a clear kink corresponding to the transit time. The room-temperature electron mobility in multilayer structures is smaller by three or four orders of magnitude than that observed in bulk a-Si:H. The room-temperature electron mobility decreases with decreasing well layer width at constant layer thickness of 13 Å, while the activation energy of the mobility increases. The lifetime of electrons tends to increase when the well layer thickness is reduced.

AB - Electron drift mobility longitudinal to hydrogenated amorphous silicon/silicon nitride multilayer structures has been measured by the time-of-flight method. Transient photocurrent shows a clear kink corresponding to the transit time. The room-temperature electron mobility in multilayer structures is smaller by three or four orders of magnitude than that observed in bulk a-Si:H. The room-temperature electron mobility decreases with decreasing well layer width at constant layer thickness of 13 Å, while the activation energy of the mobility increases. The lifetime of electrons tends to increase when the well layer thickness is reduced.

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