We describe a distributed baseband amplifier using a new loss compensation technique for the drain artificial line. The new loss compensation circuit improves a high-frequency performance of the amplifier and makes the gain bandwidth product of the amplifier larger than that of conventional ones. We also use dc matching terminations and dumping resistors for the gate and drain artificial lines to obtain flat gain from frequencies as low as 0 Hz. One 1C fabricated using 0.1 μm-gatelength InAlAs/lnGaAs/lnP HEMTs has a gain of 16 dB over a O-to-50 GHz band, resulting in a gain bandwidth product of about 300 GHz. Another 1C has a gain of 10 dB over a O-to-90 GHz band. These are the highest gain bandwidth product and the widest band reported for baseband amplifier IC's applicable to optical transmission systems.
|Number of pages||6|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|Issue number||10 PART 1|
|Publication status||Published - Dec 1 1996|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering