Low current magnetic-ram memory operation with a high sensitive spin valve material

Kimihide Matsuyama, H. Asada, S. Ikeda, K. Taniguchi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Bistable bit state changes of a magnetic-RAM memory cell (2 × 5 μm2) made with a high sensitive spin valve material were performed with pulsed conductor currents Iw of 5,5 mA/μm for parallel to antiparallel and 3,0 mA/μm for the reverse switching. An evaporated spin valve of NiFe(6 nm)/Co(1-2 nm)/Cu(5 nm)/Co(6 nm) was used for the material. Output voltage change of 1 mV was obtained for a sense current of 0,5 mA due to the MR change of 3 %, A threshold of Iw for the state change was decreased 20 % by applying a transverse external field of 30 Oe, which confirms the selective write operation with the coincident current selection scheme.

Original languageEnglish
Pages (from-to)3283-3285
Number of pages3
JournalIEEE Transactions on Magnetics
Volume33
Issue number5 PART 1
DOIs
Publication statusPublished - Dec 1 1997

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Data storage equipment
Random access storage
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Low current magnetic-ram memory operation with a high sensitive spin valve material. / Matsuyama, Kimihide; Asada, H.; Ikeda, S.; Taniguchi, K.

In: IEEE Transactions on Magnetics, Vol. 33, No. 5 PART 1, 01.12.1997, p. 3283-3285.

Research output: Contribution to journalArticle

Matsuyama, Kimihide ; Asada, H. ; Ikeda, S. ; Taniguchi, K. / Low current magnetic-ram memory operation with a high sensitive spin valve material. In: IEEE Transactions on Magnetics. 1997 ; Vol. 33, No. 5 PART 1. pp. 3283-3285.
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