Low driving voltage organic light emitting diode using phenanthrene oligomers as electron transport layer

Hsiao Wen Hung, Norimasa Yokoyama, Masayuki Yahiro, Chihaya Adachi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We demonstrate that an electron transport material, 2-(phenanthren-10-yl)-7 -(phenanthren-9-yl)phenanthrene (Phen-A), significantly lowers the driving voltage in organic light emitting diodes. In a device structure of indium tin oxides (110 nm)/N,N'-di(α-naphtyl)-N,N'-diphenyl-benzidine (50 nm)/ tris-(8-hydroxy quinoline)aluminum (20 nm)/Phen-A (30 nm)/MgAg (100 nm)/Ag (10 nm), a very low driving voltage of 5.8 V was obtained at a current density of 100 mA/cm2. We clarified that Phen-A has a preferred the lowest unoccupied molecular orbital level and a characteristic polycrystalline texture, which are ascribed to the reason for the improved electron injection efficiency at the Phen-A/cathode interface.

Original languageEnglish
Pages (from-to)8717-8720
Number of pages4
JournalThin Solid Films
Volume516
Issue number23
DOIs
Publication statusPublished - Oct 1 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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