Low-Energy Ion-Assisted Deposition of Boron Nitride Films in Surface-Wave Plasma

M. Torigoe, Kungen Tsutsui, S. Matsumoto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A surface-wave plasma operated at 2.45-GHz microwave (MW) is used to deposit hexagonal boron nitride (hBN) films by applying a negative or positive bias voltage to a substrate. Ion energy and flux onto the substrate are examined in terms of MW power, pressure, substrate location, and substrate bias. The mean ion energy is estimated from the sheath potential measured with a Langmuir probe and controlled between a few electronvolts and 170 eV. hBN films are deposited on silicon in a gas mixture of He, N, H, and BFN by varying either the ion energy or substrate temperature under a high ion flux condition (1017 cm-2s-1). The results show that the crystallinity of sp2-bonding network in the films depends upon ion energy more than substrate temperature.

Original languageEnglish
Article number7762178
Pages (from-to)3219-3222
Number of pages4
JournalIEEE Transactions on Plasma Science
Volume44
Issue number12
DOIs
Publication statusPublished - Dec 1 2016

Fingerprint

boron nitrides
surface waves
ions
energy
microwaves
electrostatic probes
sheaths
gas mixtures
crystallinity
deposits
temperature
electric potential
silicon

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Condensed Matter Physics

Cite this

Low-Energy Ion-Assisted Deposition of Boron Nitride Films in Surface-Wave Plasma. / Torigoe, M.; Tsutsui, Kungen; Matsumoto, S.

In: IEEE Transactions on Plasma Science, Vol. 44, No. 12, 7762178, 01.12.2016, p. 3219-3222.

Research output: Contribution to journalArticle

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