Low energy ion scattering: Surface preparation and analysis of Cu(In,Ga)Se2 for photovoltaic applications

Helena Tellez Lozano, John William Richard Druce, Allen Hall, Tatsumi Ishihara, John Kilner, Angus Rockett

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Cu(In,Ga)Se2 (CIGS) single-crystal epitaxial films have been analyzed by low energy ion scattering, which is sensitive to exactly the outermost surface atomic layer, to determine the surface chemistry as a function of preparation conditions. The samples were grown by a hybrid sputtering and evaporation method on cation (A) or anion (B) terminated (111) GaAs substrates and had smooth surfaces. The samples were exposed to excited atomic oxygen or hydrogen beams or were sputtered with 500 eV Ar+ ions. Atomic O∗ treatment resulted in an otherwise clean, oxidized surface including all film constituents. Atomic H∗ resulted in strong enhancement of the surface Ga population, probably due to a preexisting Ga native oxide in the outermost atomic layer. Sputtering produced a clean surface that was closest to the bulk composition of the film as measured by energy-dispersive spectroscopy.

Original languageEnglish
Pages (from-to)1219-1227
Number of pages9
JournalProgress in Photovoltaics: Research and Applications
Volume23
Issue number10
DOIs
Publication statusPublished - Oct 1 2015

Fingerprint

ion scattering
Scattering
Ions
preparation
Sputtering
energy
sputtering
Epitaxial films
Surface chemistry
Oxides
Anions
Cations
Energy dispersive spectroscopy
Hydrogen
Evaporation
Negative ions
Positive ions
Single crystals
Oxygen
evaporation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Low energy ion scattering : Surface preparation and analysis of Cu(In,Ga)Se2 for photovoltaic applications. / Tellez Lozano, Helena; Druce, John William Richard; Hall, Allen; Ishihara, Tatsumi; Kilner, John; Rockett, Angus.

In: Progress in Photovoltaics: Research and Applications, Vol. 23, No. 10, 01.10.2015, p. 1219-1227.

Research output: Contribution to journalArticle

Tellez Lozano, Helena ; Druce, John William Richard ; Hall, Allen ; Ishihara, Tatsumi ; Kilner, John ; Rockett, Angus. / Low energy ion scattering : Surface preparation and analysis of Cu(In,Ga)Se2 for photovoltaic applications. In: Progress in Photovoltaics: Research and Applications. 2015 ; Vol. 23, No. 10. pp. 1219-1227.
@article{340e1083d77b4579ad34024af06bc460,
title = "Low energy ion scattering: Surface preparation and analysis of Cu(In,Ga)Se2 for photovoltaic applications",
abstract = "Cu(In,Ga)Se2 (CIGS) single-crystal epitaxial films have been analyzed by low energy ion scattering, which is sensitive to exactly the outermost surface atomic layer, to determine the surface chemistry as a function of preparation conditions. The samples were grown by a hybrid sputtering and evaporation method on cation (A) or anion (B) terminated (111) GaAs substrates and had smooth surfaces. The samples were exposed to excited atomic oxygen or hydrogen beams or were sputtered with 500 eV Ar+ ions. Atomic O∗ treatment resulted in an otherwise clean, oxidized surface including all film constituents. Atomic H∗ resulted in strong enhancement of the surface Ga population, probably due to a preexisting Ga native oxide in the outermost atomic layer. Sputtering produced a clean surface that was closest to the bulk composition of the film as measured by energy-dispersive spectroscopy.",
author = "{Tellez Lozano}, Helena and Druce, {John William Richard} and Allen Hall and Tatsumi Ishihara and John Kilner and Angus Rockett",
year = "2015",
month = "10",
day = "1",
doi = "10.1002/pip.2535",
language = "English",
volume = "23",
pages = "1219--1227",
journal = "Progress in Photovoltaics: Research and Applications",
issn = "1062-7995",
publisher = "John Wiley and Sons Ltd",
number = "10",

}

TY - JOUR

T1 - Low energy ion scattering

T2 - Surface preparation and analysis of Cu(In,Ga)Se2 for photovoltaic applications

AU - Tellez Lozano, Helena

AU - Druce, John William Richard

AU - Hall, Allen

AU - Ishihara, Tatsumi

AU - Kilner, John

AU - Rockett, Angus

PY - 2015/10/1

Y1 - 2015/10/1

N2 - Cu(In,Ga)Se2 (CIGS) single-crystal epitaxial films have been analyzed by low energy ion scattering, which is sensitive to exactly the outermost surface atomic layer, to determine the surface chemistry as a function of preparation conditions. The samples were grown by a hybrid sputtering and evaporation method on cation (A) or anion (B) terminated (111) GaAs substrates and had smooth surfaces. The samples were exposed to excited atomic oxygen or hydrogen beams or were sputtered with 500 eV Ar+ ions. Atomic O∗ treatment resulted in an otherwise clean, oxidized surface including all film constituents. Atomic H∗ resulted in strong enhancement of the surface Ga population, probably due to a preexisting Ga native oxide in the outermost atomic layer. Sputtering produced a clean surface that was closest to the bulk composition of the film as measured by energy-dispersive spectroscopy.

AB - Cu(In,Ga)Se2 (CIGS) single-crystal epitaxial films have been analyzed by low energy ion scattering, which is sensitive to exactly the outermost surface atomic layer, to determine the surface chemistry as a function of preparation conditions. The samples were grown by a hybrid sputtering and evaporation method on cation (A) or anion (B) terminated (111) GaAs substrates and had smooth surfaces. The samples were exposed to excited atomic oxygen or hydrogen beams or were sputtered with 500 eV Ar+ ions. Atomic O∗ treatment resulted in an otherwise clean, oxidized surface including all film constituents. Atomic H∗ resulted in strong enhancement of the surface Ga population, probably due to a preexisting Ga native oxide in the outermost atomic layer. Sputtering produced a clean surface that was closest to the bulk composition of the film as measured by energy-dispersive spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=84941748537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84941748537&partnerID=8YFLogxK

U2 - 10.1002/pip.2535

DO - 10.1002/pip.2535

M3 - Article

AN - SCOPUS:84941748537

VL - 23

SP - 1219

EP - 1227

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

SN - 1062-7995

IS - 10

ER -