Low erosion tungsten CMP process with high productivity

M. Shiratani, K. Kumazawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The erosion generated by the over-polishing step of tungsten CMP (chemical mechanical polishing) may cause metal residue in the surface of upper copper (Cu) damascene interconnects. Generally, lower downforce is effective to decrease the erosion1). However, the throughput of W CMP decreases, since the low downforce polishing requires a longer polish time. In this paper, a W CMP procedure with low erosion and high productivity is discussed focusing on differences in incubation times. The procedure contains two polishing steps: shortening the incubation time and suppressing erosion in the over-polishing stage.

Original languageEnglish
Title of host publicationISSM 2006 Conference Proceedings - Fifteenth International Symposium on Semiconductor Manufacturing
Pages149-151
Number of pages3
DOIs
Publication statusPublished - Dec 1 2006
Externally publishedYes
EventISSM 2006 - 15th International Symposium on Semiconductor Manufacturing - Tokyo, Japan
Duration: Sep 25 2007Sep 27 2007

Publication series

NameIEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
ISSN (Print)1523-553X

Other

OtherISSM 2006 - 15th International Symposium on Semiconductor Manufacturing
CountryJapan
CityTokyo
Period9/25/079/27/07

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Shiratani, M., & Kumazawa, K. (2006). Low erosion tungsten CMP process with high productivity. In ISSM 2006 Conference Proceedings - Fifteenth International Symposium on Semiconductor Manufacturing (pp. 149-151). [4493046] (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings). https://doi.org/10.1109/ISSM.2006.4493046