Low flicker-noise and low leakage direct conversion CMOS mixer for 5GHz application

Haruichi Kanaya; N. Koga; M. A. Abdelghany; Ramesh Pokharel; K. Yoshida

doi:10.1109/APMC.2009.5384348

Low flicker-noise and low leakage direct conversion CMOS mixer for 5GHz application

Haruichi Kanaya, N. Koga, M. A. Abdelghany, Ramesh Pokharel, K. Yoshida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

This paper presents the design and measurement of low flicker-noise, high conversion gain double-balanced Gilbert cell mixer in CMOS process. Since the noise figure (NF) of the CMOS mixer is strongly affected by flicker noise (1/f noise), a dynamic current injection technique is used to reduce the flicker noise corner frequency. An inductor is employed to tune the tail capacitance in the local oscillator and the RF transconductance stages. So, it reduces the RF leakage through this parasitic capacitance. Moreover, output band elimination filter (BEF) is employed to suppress the leakage of the RF signal. The mixer is designed using TSMC 0.18 μm CMOS process. Simulations and measurements had been performed. The proposed mixer has a simulated conversion gain of 15dB and single side band noise figure is 10.6dB at 20kHz.

Original language	English
Title of host publication	APMC 2009 - Asia Pacific Microwave Conference 2009
Pages	1631-1634
Number of pages	4
DOIs	https://doi.org/10.1109/APMC.2009.5384348
Publication status	Published - 2009
Event	Asia Pacific Microwave Conference 2009, APMC 2009 - Singapore, Singapore Duration: Dec 7 2009 → Dec 10 2009

Other

Other	Asia Pacific Microwave Conference 2009, APMC 2009
Country/Territory	Singapore
City	Singapore
Period	12/7/09 → 12/10/09

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/APMC.2009.5384348

Cite this

@inproceedings{6b2db77a70014b41abead28c5f97794e,

title = "Low flicker-noise and low leakage direct conversion CMOS mixer for 5GHz application",

abstract = "This paper presents the design and measurement of low flicker-noise, high conversion gain double-balanced Gilbert cell mixer in CMOS process. Since the noise figure (NF) of the CMOS mixer is strongly affected by flicker noise (1/f noise), a dynamic current injection technique is used to reduce the flicker noise corner frequency. An inductor is employed to tune the tail capacitance in the local oscillator and the RF transconductance stages. So, it reduces the RF leakage through this parasitic capacitance. Moreover, output band elimination filter (BEF) is employed to suppress the leakage of the RF signal. The mixer is designed using TSMC 0.18 μm CMOS process. Simulations and measurements had been performed. The proposed mixer has a simulated conversion gain of 15dB and single side band noise figure is 10.6dB at 20kHz.",

author = "Haruichi Kanaya and N. Koga and Abdelghany, {M. A.} and Ramesh Pokharel and K. Yoshida",

year = "2009",

doi = "10.1109/APMC.2009.5384348",

language = "English",

isbn = "9781424428021",

pages = "1631--1634",

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note = "Asia Pacific Microwave Conference 2009, APMC 2009 ; Conference date: 07-12-2009 Through 10-12-2009",

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T1 - Low flicker-noise and low leakage direct conversion CMOS mixer for 5GHz application

AU - Kanaya, Haruichi

AU - Koga, N.

AU - Abdelghany, M. A.

AU - Pokharel, Ramesh

AU - Yoshida, K.

PY - 2009

Y1 - 2009

N2 - This paper presents the design and measurement of low flicker-noise, high conversion gain double-balanced Gilbert cell mixer in CMOS process. Since the noise figure (NF) of the CMOS mixer is strongly affected by flicker noise (1/f noise), a dynamic current injection technique is used to reduce the flicker noise corner frequency. An inductor is employed to tune the tail capacitance in the local oscillator and the RF transconductance stages. So, it reduces the RF leakage through this parasitic capacitance. Moreover, output band elimination filter (BEF) is employed to suppress the leakage of the RF signal. The mixer is designed using TSMC 0.18 μm CMOS process. Simulations and measurements had been performed. The proposed mixer has a simulated conversion gain of 15dB and single side band noise figure is 10.6dB at 20kHz.

AB - This paper presents the design and measurement of low flicker-noise, high conversion gain double-balanced Gilbert cell mixer in CMOS process. Since the noise figure (NF) of the CMOS mixer is strongly affected by flicker noise (1/f noise), a dynamic current injection technique is used to reduce the flicker noise corner frequency. An inductor is employed to tune the tail capacitance in the local oscillator and the RF transconductance stages. So, it reduces the RF leakage through this parasitic capacitance. Moreover, output band elimination filter (BEF) is employed to suppress the leakage of the RF signal. The mixer is designed using TSMC 0.18 μm CMOS process. Simulations and measurements had been performed. The proposed mixer has a simulated conversion gain of 15dB and single side band noise figure is 10.6dB at 20kHz.

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BT - APMC 2009 - Asia Pacific Microwave Conference 2009

T2 - Asia Pacific Microwave Conference 2009, APMC 2009

Y2 - 7 December 2009 through 10 December 2009

ER -

Low flicker-noise and low leakage direct conversion CMOS mixer for 5GHz application

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