Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes

Haisong Jiang, Hany Ayad Bastawrous, Takuma Hagio, Shinji Matsuo, Kiichi Hamamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Low hysteresis threshold current (39mA) was demonstrated using active multi-mode interferometer bistable laser diodes. Higher cross-gain saturation with significant reduction of saturable absorber region resulted in low threshold with maintaining wide hysteresis.

Original languageEnglish
Title of host publication2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages123-124
Number of pages2
DOIs
Publication statusPublished - 2010
Event2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 - Kyoto, Japan
Duration: Sep 26 2010Sep 30 2010

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Other

Other2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010
CountryJapan
CityKyoto
Period9/26/109/30/10

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Jiang, H., Bastawrous, H. A., Hagio, T., Matsuo, S., & Hamamoto, K. (2010). Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes. In 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010 (pp. 123-124). [5642722] (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2010.5642722