Low insertion loss 60 GHz CMOS H-shaped resonator BPF

Adel Barakat, Nessim Mahmoud, Ramesh K. Pokharel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a low insertion less 60 GHz on-chip bandpass filter (BPF) on 0.18 μm standard CMOS technology. For insertion loss minimization, this BPF uses the H-shaped resonator which couples through two branches and the rectangular defected ground structures (DGS) which reduce the external quality factor. Besides, this BPF employs metal-insulator-metal capacitor to ensure size compactness. The fabricated BPF chip size is 240 μm × 650 μm. The simulation results agree well with the measured ones. The measured insertion loss is 2.1 dB at 60GHz.

Original languageEnglish
Title of host publication2017 IEEE Radio and Wireless Symposium, RWS 2017
PublisherIEEE Computer Society
Pages187-189
Number of pages3
ISBN (Electronic)9781509034451
DOIs
Publication statusPublished - Mar 23 2017
Event2017 IEEE Radio and Wireless Symposium, RWS 2017 - Phoenix, United States
Duration: Jan 15 2017Jan 18 2017

Publication series

NameIEEE Radio and Wireless Symposium, RWS
ISSN (Print)2164-2958
ISSN (Electronic)2164-2974

Other

Other2017 IEEE Radio and Wireless Symposium, RWS 2017
CountryUnited States
CityPhoenix
Period1/15/171/18/17

Fingerprint

Insertion losses
Bandpass filters
Resonators
simulation
Defected ground structures
Metals
Capacitors

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Communication

Cite this

Barakat, A., Mahmoud, N., & Pokharel, R. K. (2017). Low insertion loss 60 GHz CMOS H-shaped resonator BPF. In 2017 IEEE Radio and Wireless Symposium, RWS 2017 (pp. 187-189). [7885983] (IEEE Radio and Wireless Symposium, RWS). IEEE Computer Society. https://doi.org/10.1109/RWS.2017.7885983

Low insertion loss 60 GHz CMOS H-shaped resonator BPF. / Barakat, Adel; Mahmoud, Nessim; Pokharel, Ramesh K.

2017 IEEE Radio and Wireless Symposium, RWS 2017. IEEE Computer Society, 2017. p. 187-189 7885983 (IEEE Radio and Wireless Symposium, RWS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Barakat, A, Mahmoud, N & Pokharel, RK 2017, Low insertion loss 60 GHz CMOS H-shaped resonator BPF. in 2017 IEEE Radio and Wireless Symposium, RWS 2017., 7885983, IEEE Radio and Wireless Symposium, RWS, IEEE Computer Society, pp. 187-189, 2017 IEEE Radio and Wireless Symposium, RWS 2017, Phoenix, United States, 1/15/17. https://doi.org/10.1109/RWS.2017.7885983
Barakat A, Mahmoud N, Pokharel RK. Low insertion loss 60 GHz CMOS H-shaped resonator BPF. In 2017 IEEE Radio and Wireless Symposium, RWS 2017. IEEE Computer Society. 2017. p. 187-189. 7885983. (IEEE Radio and Wireless Symposium, RWS). https://doi.org/10.1109/RWS.2017.7885983
Barakat, Adel ; Mahmoud, Nessim ; Pokharel, Ramesh K. / Low insertion loss 60 GHz CMOS H-shaped resonator BPF. 2017 IEEE Radio and Wireless Symposium, RWS 2017. IEEE Computer Society, 2017. pp. 187-189 (IEEE Radio and Wireless Symposium, RWS).
@inproceedings{80b32c75bba34225b006cc6e29e8a37b,
title = "Low insertion loss 60 GHz CMOS H-shaped resonator BPF",
abstract = "This paper presents a low insertion less 60 GHz on-chip bandpass filter (BPF) on 0.18 μm standard CMOS technology. For insertion loss minimization, this BPF uses the H-shaped resonator which couples through two branches and the rectangular defected ground structures (DGS) which reduce the external quality factor. Besides, this BPF employs metal-insulator-metal capacitor to ensure size compactness. The fabricated BPF chip size is 240 μm × 650 μm. The simulation results agree well with the measured ones. The measured insertion loss is 2.1 dB at 60GHz.",
author = "Adel Barakat and Nessim Mahmoud and Pokharel, {Ramesh K.}",
year = "2017",
month = "3",
day = "23",
doi = "10.1109/RWS.2017.7885983",
language = "English",
series = "IEEE Radio and Wireless Symposium, RWS",
publisher = "IEEE Computer Society",
pages = "187--189",
booktitle = "2017 IEEE Radio and Wireless Symposium, RWS 2017",
address = "United States",

}

TY - GEN

T1 - Low insertion loss 60 GHz CMOS H-shaped resonator BPF

AU - Barakat, Adel

AU - Mahmoud, Nessim

AU - Pokharel, Ramesh K.

PY - 2017/3/23

Y1 - 2017/3/23

N2 - This paper presents a low insertion less 60 GHz on-chip bandpass filter (BPF) on 0.18 μm standard CMOS technology. For insertion loss minimization, this BPF uses the H-shaped resonator which couples through two branches and the rectangular defected ground structures (DGS) which reduce the external quality factor. Besides, this BPF employs metal-insulator-metal capacitor to ensure size compactness. The fabricated BPF chip size is 240 μm × 650 μm. The simulation results agree well with the measured ones. The measured insertion loss is 2.1 dB at 60GHz.

AB - This paper presents a low insertion less 60 GHz on-chip bandpass filter (BPF) on 0.18 μm standard CMOS technology. For insertion loss minimization, this BPF uses the H-shaped resonator which couples through two branches and the rectangular defected ground structures (DGS) which reduce the external quality factor. Besides, this BPF employs metal-insulator-metal capacitor to ensure size compactness. The fabricated BPF chip size is 240 μm × 650 μm. The simulation results agree well with the measured ones. The measured insertion loss is 2.1 dB at 60GHz.

UR - http://www.scopus.com/inward/record.url?scp=85018171716&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018171716&partnerID=8YFLogxK

U2 - 10.1109/RWS.2017.7885983

DO - 10.1109/RWS.2017.7885983

M3 - Conference contribution

AN - SCOPUS:85018171716

T3 - IEEE Radio and Wireless Symposium, RWS

SP - 187

EP - 189

BT - 2017 IEEE Radio and Wireless Symposium, RWS 2017

PB - IEEE Computer Society

ER -