Low insertion loss 60 GHz CMOS H-shaped resonator BPF

Adel Barakat, Nessim Mahmoud, Ramesh K. Pokharel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a low insertion less 60 GHz on-chip bandpass filter (BPF) on 0.18 μm standard CMOS technology. For insertion loss minimization, this BPF uses the H-shaped resonator which couples through two branches and the rectangular defected ground structures (DGS) which reduce the external quality factor. Besides, this BPF employs metal-insulator-metal capacitor to ensure size compactness. The fabricated BPF chip size is 240 μm × 650 μm. The simulation results agree well with the measured ones. The measured insertion loss is 2.1 dB at 60GHz.

Original languageEnglish
Title of host publication2017 IEEE Radio and Wireless Symposium, RWS 2017
PublisherIEEE Computer Society
Pages187-189
Number of pages3
ISBN (Electronic)9781509034451
DOIs
Publication statusPublished - Mar 23 2017
Event2017 IEEE Radio and Wireless Symposium, RWS 2017 - Phoenix, United States
Duration: Jan 15 2017Jan 18 2017

Publication series

NameIEEE Radio and Wireless Symposium, RWS
ISSN (Print)2164-2958
ISSN (Electronic)2164-2974

Other

Other2017 IEEE Radio and Wireless Symposium, RWS 2017
CountryUnited States
CityPhoenix
Period1/15/171/18/17

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Communication

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