Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching

Kiichi Hamamoto, E. Gini, H. Melchior

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

A high power InP/InGaAsP buried-hetero structure laser diodes were fabricated using inductively coupled plasma (ICP) etching. Low internal losses and internal quantum efficiencies were analyzed under extremely fast mesa-etching. Mixtures of methane gas and halogen gas was used along with the ICP dry-etching system to attain fast etching rates. It was found that superior laser diodes characteristics were obtained using high throughput methane/halogen ICP fabrication.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages136-139
Number of pages4
Publication statusPublished - 2001
Externally publishedYes
Event2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan
Duration: May 14 2001May 18 2001

Other

Other2001 International Conference on Indium Phosphide and Related Materials
CountryJapan
CityNara
Period5/14/015/18/01

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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    Hamamoto, K., Gini, E., & Melchior, H. (2001). Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 136-139)