Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching

Kiichi Hamamoto, E. Gini, H. Melchior

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

A high power InP/InGaAsP buried-hetero structure laser diodes were fabricated using inductively coupled plasma (ICP) etching. Low internal losses and internal quantum efficiencies were analyzed under extremely fast mesa-etching. Mixtures of methane gas and halogen gas was used along with the ICP dry-etching system to attain fast etching rates. It was found that superior laser diodes characteristics were obtained using high throughput methane/halogen ICP fabrication.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages136-139
Number of pages4
Publication statusPublished - 2001
Externally publishedYes
Event2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan
Duration: May 14 2001May 18 2001

Other

Other2001 International Conference on Indium Phosphide and Related Materials
CountryJapan
CityNara
Period5/14/015/18/01

Fingerprint

Plasma etching
Inductively coupled plasma
plasma etching
Semiconductor lasers
Halogens
semiconductor lasers
Methane
etching
halogens
Etching
methane
Gases
Dry etching
mesas
Quantum efficiency
gases
quantum efficiency
Throughput
Fabrication
fabrication

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Hamamoto, K., Gini, E., & Melchior, H. (2001). Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 136-139)

Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching. / Hamamoto, Kiichi; Gini, E.; Melchior, H.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2001. p. 136-139.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hamamoto, K, Gini, E & Melchior, H 2001, Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 136-139, 2001 International Conference on Indium Phosphide and Related Materials, Nara, Japan, 5/14/01.
Hamamoto K, Gini E, Melchior H. Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2001. p. 136-139
Hamamoto, Kiichi ; Gini, E. ; Melchior, H. / Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2001. pp. 136-139
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abstract = "A high power InP/InGaAsP buried-hetero structure laser diodes were fabricated using inductively coupled plasma (ICP) etching. Low internal losses and internal quantum efficiencies were analyzed under extremely fast mesa-etching. Mixtures of methane gas and halogen gas was used along with the ICP dry-etching system to attain fast etching rates. It was found that superior laser diodes characteristics were obtained using high throughput methane/halogen ICP fabrication.",
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