Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O 9-Bi3TiTaO9 solid solution thin film

Masatoshi Mitsuya, Norimasa Nukaga, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito, Minoru Osada

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

(1-x)SrBi2(Ta0.7Nb0.3)2O 9+xBi3TiTaO9 (x=0-0.5) solid-solution (SBTN+BTT) films of low defect contents were directly crystallized on (111)Pt/Ti/SiO2/Si substrates at 650°C by metal-organic chemical vapor deposition. The deposited films showed a strong (103) orientation. The remanent polarization (Pr) of the directly crystallized SBTN (x=0) was very small. However, the Pr value increased to 7.1 μC/cm2 by adding 30% of BTT (x=0.3) and was almost equal to that of Sr0.8Bi2.2(Ta0.7Nb0.3) 209(S0.8B2.2TN), which is widely studied for nonvolatile memory applications. The leakage current density of the SBTN+BTT solid solution was on the order of 10-8 A/cm2 for fields up to 200 kV/cm due to its low defect contents character, while that of S0.8B2.2TN was above 10-6A/cm2 due to the existence of defects in the Sr sites. The solid-solution film showed a fatigue-free character.

Original languageEnglish
Pages (from-to)2067-2069
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number13
DOIs
Publication statusPublished - Sep 24 2001
Externally publishedYes

Fingerprint

leakage
solid solutions
defects
thin films
polarization
metalorganic chemical vapor deposition
current density

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O 9-Bi3TiTaO9 solid solution thin film. / Mitsuya, Masatoshi; Nukaga, Norimasa; Watanabe, Takayuki; Funakubo, Hiroshi; Saito, Keisuke; Osada, Minoru.

In: Applied Physics Letters, Vol. 79, No. 13, 24.09.2001, p. 2067-2069.

Research output: Contribution to journalArticle

Mitsuya, Masatoshi ; Nukaga, Norimasa ; Watanabe, Takayuki ; Funakubo, Hiroshi ; Saito, Keisuke ; Osada, Minoru. / Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O 9-Bi3TiTaO9 solid solution thin film. In: Applied Physics Letters. 2001 ; Vol. 79, No. 13. pp. 2067-2069.
@article{2a1c29a3a8854189b130de0950a77689,
title = "Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O 9-Bi3TiTaO9 solid solution thin film",
abstract = "(1-x)SrBi2(Ta0.7Nb0.3)2O 9+xBi3TiTaO9 (x=0-0.5) solid-solution (SBTN+BTT) films of low defect contents were directly crystallized on (111)Pt/Ti/SiO2/Si substrates at 650°C by metal-organic chemical vapor deposition. The deposited films showed a strong (103) orientation. The remanent polarization (Pr) of the directly crystallized SBTN (x=0) was very small. However, the Pr value increased to 7.1 μC/cm2 by adding 30{\%} of BTT (x=0.3) and was almost equal to that of Sr0.8Bi2.2(Ta0.7Nb0.3) 209(S0.8B2.2TN), which is widely studied for nonvolatile memory applications. The leakage current density of the SBTN+BTT solid solution was on the order of 10-8 A/cm2 for fields up to 200 kV/cm due to its low defect contents character, while that of S0.8B2.2TN was above 10-6A/cm2 due to the existence of defects in the Sr sites. The solid-solution film showed a fatigue-free character.",
author = "Masatoshi Mitsuya and Norimasa Nukaga and Takayuki Watanabe and Hiroshi Funakubo and Keisuke Saito and Minoru Osada",
year = "2001",
month = "9",
day = "24",
doi = "10.1063/1.1407858",
language = "English",
volume = "79",
pages = "2067--2069",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O 9-Bi3TiTaO9 solid solution thin film

AU - Mitsuya, Masatoshi

AU - Nukaga, Norimasa

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

AU - Saito, Keisuke

AU - Osada, Minoru

PY - 2001/9/24

Y1 - 2001/9/24

N2 - (1-x)SrBi2(Ta0.7Nb0.3)2O 9+xBi3TiTaO9 (x=0-0.5) solid-solution (SBTN+BTT) films of low defect contents were directly crystallized on (111)Pt/Ti/SiO2/Si substrates at 650°C by metal-organic chemical vapor deposition. The deposited films showed a strong (103) orientation. The remanent polarization (Pr) of the directly crystallized SBTN (x=0) was very small. However, the Pr value increased to 7.1 μC/cm2 by adding 30% of BTT (x=0.3) and was almost equal to that of Sr0.8Bi2.2(Ta0.7Nb0.3) 209(S0.8B2.2TN), which is widely studied for nonvolatile memory applications. The leakage current density of the SBTN+BTT solid solution was on the order of 10-8 A/cm2 for fields up to 200 kV/cm due to its low defect contents character, while that of S0.8B2.2TN was above 10-6A/cm2 due to the existence of defects in the Sr sites. The solid-solution film showed a fatigue-free character.

AB - (1-x)SrBi2(Ta0.7Nb0.3)2O 9+xBi3TiTaO9 (x=0-0.5) solid-solution (SBTN+BTT) films of low defect contents were directly crystallized on (111)Pt/Ti/SiO2/Si substrates at 650°C by metal-organic chemical vapor deposition. The deposited films showed a strong (103) orientation. The remanent polarization (Pr) of the directly crystallized SBTN (x=0) was very small. However, the Pr value increased to 7.1 μC/cm2 by adding 30% of BTT (x=0.3) and was almost equal to that of Sr0.8Bi2.2(Ta0.7Nb0.3) 209(S0.8B2.2TN), which is widely studied for nonvolatile memory applications. The leakage current density of the SBTN+BTT solid solution was on the order of 10-8 A/cm2 for fields up to 200 kV/cm due to its low defect contents character, while that of S0.8B2.2TN was above 10-6A/cm2 due to the existence of defects in the Sr sites. The solid-solution film showed a fatigue-free character.

UR - http://www.scopus.com/inward/record.url?scp=0035943839&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035943839&partnerID=8YFLogxK

U2 - 10.1063/1.1407858

DO - 10.1063/1.1407858

M3 - Article

AN - SCOPUS:0035943839

VL - 79

SP - 2067

EP - 2069

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -